EN模拟优化硼掺杂多晶硅提升交叉背接触电池性能
模拟优化硼掺杂多晶硅提升交叉背接触电池性能
- 太阳能学报 2026年47卷第3期 页码：747-752
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DOI：doi:10.19912/j.0254-0096.tynxb.2024-2041
中图分类号： TK914-
网络首发：2026-04-07，
纸质出版：2026
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储余, 厉佥元, 刘焱康, 等. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 太阳能学报, 2026,47(3):747-752.
储余, 厉佥元, 刘焱康, et al. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 2026, 47(3): 747-752.
储余, 厉佥元, 刘焱康, 等. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 太阳能学报, 2026,47(3):747-752. DOI： doi:10.19912/j.0254-0096.tynxb.2024-2041.
储余, 厉佥元, 刘焱康, et al. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 2026, 47(3): 747-752. DOI： doi:10.19912/j.0254-0096.tynxb.2024-2041.
摘要
利用Quokka3模拟软件
系统分析硼掺杂多晶硅（p-poly）的钝化性能、接触性能及图形设计对交叉背接触（IBC）电池性能的影响。在此基础上
详细讨论隧穿氧化层界面复合大小、多晶硅层掺杂浓度及硅基体内扩区对p-poly钝化性能的影响
阐述实现p-poly优异钝化性能的必要条件。
Abstract
Using the Quokka3 simulation software
we systematically analyze the impact of boron-doped polysilicon （p-poly） passivation and contact performance
as well as pattern design
on the performance of interdigitated back contact （IBC） solar cells. On this basis
we further discuss in detail the effects of the tunnel oxide interface recombination rate
the doping concentration of the polysilicon layer
and the diffusion region formed in the silicon substrate on the passivation performance of p-poly
and we outline the essential conditions required to achieve excellent passivation performance with p-poly passivating contacts.
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references
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