选择发射极对TOPCon太阳电池性能的影响研究

章康平; 孙亚楠; 李家栋; 胥星星; 廖东进; 黄志平

doi:doi:10.19912/j.0254-0096.tynxb.2024-1642

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选择发射极对TOPCon太阳电池性能的影响研究

更新时间：2026-02-06

- 选择发射极对TOPCon太阳电池性能的影响研究
- 选择发射极对TOPCon太阳电池性能的影响研究
- 太阳能学报 2026年47卷第1期页码：48-54
- 作者机构：
- 作者简介：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-1642
  中图分类号： TM914
- 网络首发：2026-02-05，
  
  纸质出版：2026-02-05
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章康平, 孙亚楠, 李家栋, 等. 选择发射极对TOPCon太阳电池性能的影响研究[J]. 太阳能学报, 2026,47(1):48-54.

章康平, 孙亚楠, 李家栋, et al. 选择发射极对TOPCon太阳电池性能的影响研究[J]. 2026, 47(1): 48-54.
章康平, 孙亚楠, 李家栋, 等. 选择发射极对TOPCon太阳电池性能的影响研究[J]. 太阳能学报, 2026,47(1):48-54. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1642.

章康平, 孙亚楠, 李家栋, et al. 选择发射极对TOPCon太阳电池性能的影响研究[J]. 2026, 47(1): 48-54. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1642.

摘要

重点分析激光功率对发射区掺杂、电池暗饱和电流、接触电阻与电性能的影响。结果表明

当激光功率输出比从73%增至78%时

选择发射区整体掺杂浓度逐渐提高

与轻扩区形成145~150 Ω/©方阻差

有效少子寿命、iVoc、接触电阻率等随整体杂质浓度的提高明显下降

而暗饱和电流的大小则受表面杂质浓度的影响更大。因而选择发射极的使用

可通过提高光吸收区的方块电阻来降低整体掺杂浓度

从而提高少子寿命和高开路电压。当激光功率输出比为75%时

暗饱和电流密度为17.68 fA/cm2

接触电阻率为1.34 Ωcm2

获得最佳电池性能开路电压为723.79 mV、填充因子为84.58%、转换效率为25.51%。

Abstract

In this study

the effects of laser power on emitter doping

dark saturation current

contact resistivity

and electrical performance were investigated. The findings demonstrate that with an increase in laser power output ratio from 73% to 78%

the overall doping concentration gradually rises within the selective emitter region

resulting in a sheet resistance difference of 145-150 Ω/□ compared to lightly doped regions. Effective minority carrier lifetime

（implied open-circuit voltage）

and contact resistivity significantly decrease with higher impurity concentration overall

while dark saturation current was greatly impacted by surface doping concentration. Consequently

the utilization of a selective emitter can effectively reduce the overall doping concentration and elevate the sheet resistance within the light absorption region

achieving higher minority carrier lifetime and a open-circuit voltage. When the laser power output ratio was adjusted to 75%

a dark saturation current density of 17.68 fA/cm and a contact resistivity of 1.34 Ωcm were obtained

meanwhile optimum cell performance was achieved： open-circuit voltage of 723.79 mV

fill factor of 84.58%

and power conversion efficiency of 25.51%.

关键词

Keywords

references

FELDMANN F, BIVOUR M, REICHEL C, et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J]. Solar energy materials and solar cells, 2014, 120: 270-274.

叶浩然, 何佳龙, 陈杨, 等. TOPCon太阳电池电子选择性接触研究[J]. 太阳能学报, 2024, 45(2): 475-479.YE H R, HE J L, CHEN Y, et al. Research on electron selective contact of TOPCon solar cells[J]. Acta energiae solaris sinica, 2024, 45(2): 475-479.

吕欣, 林涛, 董鹏. 背表面掺杂对n型TOPCon电池特性的影响研究[J]. 太阳能学报, 2021, 42(11): 41-45.LYU X, LIN T, DONG P. Influence of back surface doping concentration on n-type TOPCon solar cells[J]. Acta energiae solaris sinica, 2021, 42(11): 41-45.

白宇, 何佳龙, 李君君, 等. 光电性能可调的TiN薄膜及在TOPCon太阳电池的应用[J]. 太阳能学报, 2023, 44(9): 72-77.BAI Y, HE J L, LI J J, et al. TiN thin film with adjustable photoelectric performance and its application in TOPCon solar cell[J]. Acta energiae solaris sinica, 2023, 44(9): 72-77.

TAO Y G, UPADHYAYA V, CHEN C W, et al.Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency[J]. Progress in photovoltaics: research and applications, 2016, 24(6): 830-835.

MA S, LIAO B, QIAO F Y, et al.24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in situ doped polysilicon[J]. Solar energy materials and solar cells, 2023, 257: 112396.

CHEN D M, CHEN Y F, WANG Z G, et al.24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design[J]. Solar energy materials and solar cells, 2020, 206: 110258.

GREEN M A, DUNLOP E D, HOHL-EBINGER J, et al.Solar cell efficiency tables (version 59)[J]. Progress in photovoltaics: research and applications, 2022, 30(1): 3-12.

SCHMIDT J, PEIBST R, BRENDEL R.Surface passivation of crystalline silicon solar cells: present and future[J]. Solar energy materials and solar cells, 2018, 187: 39-54.

DING D, DU Z R, LIU R L, et al.Laser doping selective emitter with thin borosilicate glass layer for n-type TOPCon c-Si solar cells[J]. Solar energy materials and solar cells, 2023, 253: 112230.

HALLAM B, CHAN C, SUGIANTO A, et al.Deep junction laser doping for contacting buried layers in silicon solar cells[J]. Solar energy materials and solar cells, 2013, 113: 124-134.

TAO Y G, MADANI K, CHO E, et al.High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells[J]. Applied physics letters, 2017, 110(2): 021101.

TOMIZAWA Y, IKEDA Y, SHIRO T.Development of n-type selective emitter silicon solar cells by laser doping using boron-doped silicon paste[J]. Energy procedia, 2016, 92: 419-426.

HONG J, LIU X, GE J W, et al.Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste[J]. Solar energy, 2022, 247: 115-122.

EBRAHIMI P, KOLAHDOUZ M, NOROUZI M, et al.Selective boron diffusion without masking layer using boric acid for solar cell emitter formation[J]. Journal of materials science: materials in electronics, 2017, 28(15): 10794-10798.

LI X L, WANG Q Q, DONG X, et al.Optimization of efficiency enhancement of TOPCon cells with boron selective emitter[J]. Solar energy materials and solar cells, 2023, 263: 112585.

WANG Q Q, GUO K Y, YUAN L, et al.Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters[J]. Solar energy materials and solar cells, 2023, 253: 112231.

CHENG H, LIU W, LIU Z K, et al.Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells[J]. Solar energy materials and solar cells, 2022, 240: 111713.

HOU C X, JIA R, TAO K, et al.Boron-rich layer removal and surface passivation of boron-doped p-n silicon solar cells[J]. Journal of semiconductors, 2018, 39(12): 122004.

WATKINS G D.Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron[J]. Physical review B, 1975, 12(12): 5824-5839.

CHRISTENSEN J S, RADAMSON H H, KUZNETSOV A Y, et al.Phosphorus and boron diffusion in silicon under equilibrium conditions[J]. Applied physics letters, 2003, 82(14): 2254-2256.

ZANUCCOLI M, BRESCIANI P F, FREI M, et al.2-D numerical simulation and modeling of monocrystalline selective emitter solar cells[C]//2010 35th IEEE Photovoltaic Specialists Conference. Honolulu, HI, USA, 2010: 2262-2265.

WEHMEIER N, SCHRAPS G, WAGNER H, et al.Boron-doped pecvd silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication[C]//Proceedings of the 28th European Photovoltaic Solar Energy Conference. Paris, France, 2013.

BOWDEN S, YELUNDUR V, ROHATGI A.Implied-Voc and suns-Voc measurements in multicrystalline solar cells[C]//Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. New Orleans, LA, USA, 2003: 371-374.

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