隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究

王皓正; 林文杰; 彭梦云; 王永谦; 邱开富; 余学功

doi:doi:10.19912/j.0254-0096.tynxb.2024-1167

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隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究

更新时间：2025-12-10

- 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究
- 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究
- 太阳能学报 2025年第11期页码：193-199
- 作者机构：
- 作者简介：
- 基金信息：
  
  国家自然科学基金（62025403;U23A20354）;浙江省“尖兵”“领雁”研发攻关计划（2024C01092）
- DOI：doi:10.19912/j.0254-0096.tynxb.2024-1167
  中图分类号： M914
- 网络出版：2025-12-04，
  
  纸质出版：2025-12-04
- 稿件说明：
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王皓正, 林文杰, 彭梦云, 等. 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究[J]. 太阳能学报, 2025,(11):193-199.

王皓正, 林文杰, 彭梦云, et al. 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究[J]. 2025, (11): 193-199.
王皓正, 林文杰, 彭梦云, 等. 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究[J]. 太阳能学报, 2025,(11):193-199. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1167.

王皓正, 林文杰, 彭梦云, et al. 隧穿层和后退火温度对PECVD法制备的TOPCon钝化性能影响的研究[J]. 2025, (11): 193-199. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1167.

摘要

深入探讨利用等离子增强化学气相沉积（PECVD）技术在制备N型高效隧穿氧化层钝化接触（TOPCon）太阳电池中的应用

着重分析隧穿氧化层与多晶硅层的关键工艺参数及其对电池钝化性能的影响。实验结果显示

隧穿氧化层的厚度对电池的钝化效果起到至关重要的作用。当氧化时间控制在105 s时钝化效果最佳

主要是因为此隧穿氧化层厚度能在载流子的隧穿概率与界面钝化效果之间实现最佳平衡。此外

退火温度也是钝化性能的关键影响因素

其最佳范围为915~930 ℃。高温退火不仅可促进磷掺杂的激活

还可减少界面缺陷

显著提高界面质量。多晶硅层的磷元素掺杂量也会影响钝化性能。随着磷掺杂量的增加

多晶硅层的场钝化效果增强

从而可提升整体的钝化性能。然而

过高的磷掺杂量可能会导致硅表面出现严重的俄歇复合现象

从而削弱钝化效果。通过精确控制隧穿氧化层的厚度和退火温度

可提升TOPCon电池的钝化效果

分析氧化时间及退火温度的影响

揭示各参数之间的复杂相互作用。最终

通过对Topcon电池关键工艺参数的深入模拟

揭示优化条件下的高效能表现

以期为工艺改进和实际应用提供科学依据与技术支持。

Abstract

This paper delves into the application of Plasma-Enhanced Chemical Vapor Deposition （PECVD） technology in the fabrication of high-efficiency N-type Tunnel Oxide Passivated Contact （TOPCon） solar cells

focusing on the key process parameters of the tunnel oxide layer and the polycrystalline silicon layer

as well as their impact on the passivation performance of the solar cells. Experimental results indicate that the thickness of the tunnel oxide layer plays a crucial role in passivation. When the oxidation time is controlled at 105 seconds

the passivation effect is optimal. This is mainly because this oxide thickness achieves an optimal balance between carrier tunneling probability and interface passivation effect. Furthermore

annealing temperature is also a key factor affecting passivation performance

with an optimal range of 915-930 ℃. High-temperature annealing not only promotes the activation of phosphorus doping but also reduces interface defects

significantly improving interface quality. The phosphorus doping level in the polycrystalline silicon layer also affects passivation performance. As the phosphorus doping increases

the field passivation effect of the polycrystalline silicon layer improves

thereby enhancing overall passivation performance. However

excessively high phosphorus doping may lead to severe Auger recombination on the silicon surface

weakening the passivation effect. This paper improves the passivation effect of TOPCon cells by precisely controlling the thickness of the tunneling oxide layer and annealing temperature. Additionally

it analyzes the influence of oxidation time and annealing temperature

revealing the complex interactions among various parameters. Ultimately

through in-depth simulation of the key process parameters of TOPCon cells

we revealed high efficiency under optimized conditions

providing scientific evidence and technical support for process improvement and practical applications.

关键词

Keywords

references

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