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林文杰, 王皓正, 王永谦, 等. 效率27%的局域钝化接触HJT太阳电池的光电设计[J]. 太阳能学报, 2025,46(9):611-617.
林文杰, 王皓正, 王永谦, 等. 效率27%的局域钝化接触HJT太阳电池的光电设计[J]. 太阳能学报, 2025,46(9):611-617. DOI: doi:10.19912/j.0254-0096.tynxb.2024-0909.
采用Sunsolve光学模拟和Quokka3器件模拟
研究电池膜层结构、膜层材料和膜层厚度、正面接触电阻、硅片电阻率和正面细栅中心间距对HJT太阳电池光电性能的影响。基于常规的HJT太阳电池
背面采用MgFx/Ag背反射器
同时正背面ITO的厚度减薄至12 nm
提高背面的长波反射
降低背面寄生吸收。正面将高寄生吸收的nc-Si:H(n)/ITO设置在栅线下方
非栅线区域采用高透明的SiNx/SiOx叠层减反膜
显著降低正面寄生吸收和前表面反射
电池短路电流提高1.63 mA/cm2
达到41.75 mA/cm2。采用模拟优化的正面细栅中心间距为1.25 mm
电阻率为1 Ω·cm
正面接触电阻为0.2 mΩ·cm2的设计
实现效率27%的局域钝化接触HJT太阳电池的设计。对比常规的HJT太阳电池
效率提高0.97%
同时正背面减薄的ITO设计降低了HJT太阳电池的制备成本。
In this work
the optical simulation by Sunsolve and device simulation by Quokka3 are used to investigate the effects of cell structure
film material and film thickness
front contact resistance
wafer resistivity
and front finger pitch on the optical and electrical performance of HJT cells. Compared with the conventional HJT solar cell
the MgF/Ag back reflector and the thin ITO of 12 nm are used on the back side
improving reflection at long wavelengths and reducing parasitic absorption on the backside. On the front side
the nc-Si: H(n)/ITO contact regions with high parasitic absorption are limited below the fingers
while a highly transparent SiN/SiO stack is used in the passivated regions
which significantly reduces the parasitic absorption and external reflection on the front side
and increases the cell by 1.63 mA/cm
reaching 41.75 mA/cm. By using the optimized front finger pitch of 1.25 mm
resistivity of 1 Ω·cm
and front of 0.2 mΩ·cm
localized passivated contact HJT solar cells with an efficiency of 27% are achieved. Compared with conventional HJT solar cells
the efficiency is improved by 0.97%
while the front and back thin ITO design reduces the fabrication cost of HJT cells.
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