碳化硅/二硼化锆超高温陶瓷抗氧化特性建模

周述光; 李睿智; 刘骁; 国义军

doi:10.7638/kqdlxxb-2025.0104

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碳化硅/二硼化锆超高温陶瓷抗氧化特性建模

研究专栏——高速飞行“新热障”问题研究进展（第二十七届中国科协年会学术论文专题） | 更新时间：2026-05-28

- 碳化硅/二硼化锆超高温陶瓷抗氧化特性建模
- Modeling of oxidation resistance characteristics of silicon carbide/zirconium diboride ultra-high temperature ceramics
- 空气动力学学报 2025年43卷第7期页码：73-82
- 作者机构：
  
  中国空气动力研究与发展中心计算空气动力研究所,绵阳,621000
- 作者简介：
  
  周述光（1981—），男，博士，高级工程师，研究方向：气动热与热防护. E-mail：zsg2015@mail.ustc.edu.cn
  李睿智（1990—），男，硕士，工程师，研究方向：防热技术. E-mail：liruizhi2008@163.com
  国义军*（1966—），男，博士，正高级工程师，研究方向：流体力学. E-mail：gyj2236985@sina.com
- 基金信息：
- DOI：10.7638/kqdlxxb-2025.0104
  中图分类号： V45;TB332
- 纸质出版：2025
- 稿件说明：
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周述光, 李睿智, 刘骁, 等. 碳化硅/二硼化锆超高温陶瓷抗氧化特性建模[J]. 空气动力学学报, 2025, 43(7): 73−82.

ZHOU Shuguang, LI Ruizhi, LIU Xiao, et al. Modeling of oxidation resistance characteristics of silicon carbide/zirconium diboride ultra-high temperature ceramics[J]. 2025, 43(7): 73-82.
周述光, 李睿智, 刘骁, 等. 碳化硅/二硼化锆超高温陶瓷抗氧化特性建模[J]. 空气动力学学报, 2025, 43(7): 73−82. DOI： 10.7638/kqdlxxb-2025.0104

ZHOU Shuguang, LI Ruizhi, LIU Xiao, et al. Modeling of oxidation resistance characteristics of silicon carbide/zirconium diboride ultra-high temperature ceramics[J]. 2025, 43(7): 73-82. DOI： 10.7638/kqdlxxb-2025.0104.

摘要

高速飞行器尖锐部件在极端热环境下常采用碳化硅/二硼化锆（SiC-ZrB

）超高温陶瓷实现维形需求，其核心在于高温氧化形成的致密固-液混合氧化膜（孔隙填充玻璃态硼硅酸盐）可有效阻氧扩散，实现整体上的零/微烧蚀。基于多孔氧化物中氧气扩散机制与热化学平衡原理，提出了SiC耗尽层存在判据，建立了含/无耗尽层的双模型体系：对于含耗尽层工况，通过耦合CO/CO

对流扩散传输、ZrO

固态层生长、B

-SiO

玻璃层蒸发/生长竞争机制，量化原始材料后退量与增重；对于无耗尽层工况，推导基材等界面后退方程及临界组分条件。通过计算明确SiC体积分数20%～30%时氧化产物致密度最高，抗氧化性能最优。在

1473

、

1573

、

1773 K

静态空气环境中开展模型验证，计算得到的氧化增重曲线与试验数据吻合良好，证明模型可较为精准模拟SiC含量变化对氧化行为的影响规律。该模型能有效模拟SiC-ZrB

陶瓷的氧化行为，为材料优化设计提供重要的抗氧化性能评估依据。

Abstract

Silicon carbide/zirconium diboride (SiC-ZrB

) ultra-high temperature ceramics (UHTCs) are commonly employed for sharp components of hypersonic vehicles under extreme thermal environments to maintain geometric configuration. The key mechanism lies in the formation of a dense s

olid-liquid mixed oxide scale (with pores filled by borosilicate glass) during high-temperature oxidation

which effectively impedes oxygen diffusion and achieves near-zero/minimal ablation. Based on oxygen diffusion mechanisms in porous oxides and thermochemical equilibrium principles

a criterion for SiC depletion layer formation was proposed

establishing a dual-model system accounting for both presence and absence of depletion layers. For cases with depletion layers

the model couples CO/CO

convective diffusion

ZrO

solid layer growth

and the competitive mechanisms of B

-SiO

glass layer evaporation/growth to quantify virgin material recession and weight gain. For cases without depletion layers

recession equations for substrate interfaces and critical composition conditions were derived. Numerical calculations identified that optimal oxidation resistance occurs at 20—30 vol% SiC content

where oxide products exhibit maximum density. Model validation conducted in static air environments at 1473

1573

and 1773 K demonstrated good agreement between calculated oxidation weight gain curves and experimental data

confirming the model's capability to accurately simulate the influence of SiC content variations on oxidation behavior. This model effectively simulates the oxidation behavior of SiC-ZrB

ceramics and provides critical evaluation criteria for oxidation resistance in material optimization design.

关键词

Keywords

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