基于IGBT器件的大功率高压直流断路器数字驱动的设计

曾进辉; 樊杨杰; 何东; 刘湘; 廖晓斌

doi:10.3969/j.issn.1008-0198.2022.05.002

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基于IGBT器件的大功率高压直流断路器数字驱动的设计

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- 基于IGBT器件的大功率高压直流断路器数字驱动的设计
- Design of Digital Drive of High Power High Voltage DC Circuit Breaker Based on IGBT Device
- 湖南电力 2022年42卷第5期页码：8-15
- 作者机构：
  
  1. 湖南工业大学电气与信息工程学院,湖南,株洲,412007
  2. 株洲福德轨道交通研究院,湖南,株洲,412007
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.1008-0198.2022.05.002
  中图分类号： TM561
- 纸质出版日期：2022
- 稿件说明：
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曾进辉, 樊杨杰, 何东, 刘湘, 廖晓斌. 基于IGBT器件的大功率高压直流断路器数字驱动的设计[J]. 湖南电力, 2022, 42(5): 8-15.

ZENG Jinhui, FAN Yangjie, HE Dong, et al. Design of Digital Drive of High Power High Voltage DC Circuit Breaker Based on IGBT Device[J]. 2022, 42(5): 8-15.
曾进辉, 樊杨杰, 何东, 刘湘, 廖晓斌. 基于IGBT器件的大功率高压直流断路器数字驱动的设计[J]. 湖南电力, 2022, 42(5): 8-15. DOI： 10.3969/j.issn.1008-0198.2022.05.002.

ZENG Jinhui, FAN Yangjie, HE Dong, et al. Design of Digital Drive of High Power High Voltage DC Circuit Breaker Based on IGBT Device[J]. 2022, 42(5): 8-15. DOI： 10.3969/j.issn.1008-0198.2022.05.002.

摘要

针对大功率多开关的应用场合

提出一种新的基于现场可编程门阵列(field programmble gate array

FPGA)高效并安全更可靠的多功能绝缘栅双极晶体管(insulated gate bipolar transistor

IGBT)数字驱动器

该驱动器能利用全面的IGBT状态检测电路、多路信号故障检测和保护电路。多开关、大功率10 kV/5 kA的断路器试验

验证了该驱动器能保证IGBT实现均压均流、温度检测等功能有效性

仅用6.4 μs实现同时关断的功能

使IGBT开关过程得到优化

保障整个断路器的安全可靠。

Abstract

Aiming at the application of high power multi-switch

a new multi-function IGBT digital driver based on field programmble gate array(FPGA)is proposed

which is efficient

safe and reliable.The driver can make use of the full insulated gate bipolar transistor(IGBT)state detection circuit

multi-channel signal fault detection and protection circuit. In the test of multi-switch and high power 10 kV/5 kA circuit breaker

it is proved that the driver can ensure the validity of IGBT's functions such as voltage sharing

current sharing and temperature detection.The function of simultaneous shutdown is realized in 6.4 μs

the switching process of IGBT is optimized

and the safety and reliability of the whole circuit breaker is ensured.

关键词

Keywords

references

钱照明, 张军明, 盛况.电力电子器件及其应用的现状和发展[J]. 中国电机工程学报, 2014, 34(29): 5149-5161.

谢祯, 吕昊, 艾胜, 等. 应用电力电子模块化组件的高压大容量变流器的设计[J]. 高电压技术,2016,42(7): 2251-2258.

成新明,甘正佳.电力晶体管GTR驱动电路设计[J].湖南电力,2000,20(3):22-25.

彭刚毅,吴军昌. MOSFET与IGBT组合器件在高频开关电源中的应用及仿真[J].湖南电力,2006,26(1):8-10.

梁美, 郑琼林,可翀,等. SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50.

唐圣学, 王维威, 马强,等. 三电平逆变器IGBT器件接线故障在线诊断方法研究[J]. 仪器仪表学报, 2020, 41(11): 19-30.

HYUNSEOK O, BONGTAE H, PATRICK M, et al.Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review[J]. IEEE Transactions on power Electronics, 2015, 30(5): 2413-2426.

SMET V, FOREST F, HUSELSTEIN J, et al. Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling [J].IEEE Transactions on Industrial Electronics, 2011, 58(10): 4931-4941.

李凯伟, 何怡刚, 李兵,等. IGBT功率模块热网络模型建立及其参数辨识方法综述和展望[J]. 电子测量与仪器学报, 2020, 34(1): 51-60.

Zhang Fan, Yang Xu, Ren Yu, et al. A hybrid active gate drive for switching loss reduction and voltage balancing of se-ries-connected IGBT[J]. IEEE Transactions on Power Electronics, 2017,32(10): 7469-7481.

Zhang Fan, Yang Xu, Ren Yu, et al. Advanced active gate drive for switching performance improvement and overvoltage protection of high-power IGBTs[J]. IEEE Transactions on Power Electronics,2018,33(5): 3802-3815.

Yang Yuan,Wen Yang, Gao Yong. A novel active gate driver for improving switching performance of high-power SiC MOSFET modules[J]. IEEE Transactions on Power Electronics, 2019,34(8): 7775-7787.

Cheng Yushan, Mannen T, Wada K, et al. Optimization platform to find a switching pattern of digital active gate drive for reducing both switching loss and surge voltage[J]. IEEE Transactions on Industry Applications, 2019,55(5): 5023-5031.

李先允, 卢乙, 倪喜军, 等. 一种改进SiC MOSFET开关性能的有源驱动电路[J].中国电机工程学报, 2020,40(18): 5760-5770.

王晨苑, 何怡刚, 王传坤,等. 高压多芯片并联IGBT模块故障监测方法[J]. 电子测量与仪器学报, 2020, 34(10): 98-106.

YANG X, LONG Z,WEN Y,et al. Investigation of the trade-off between switching losses and EMI generation in Gaussian S-shaping for high-power IGBT switching transients by active voltage control[J].IET power Electronics, 2016, 9(9): 1979-1984.

YANG X, YUAN Y, ZHANG X, et al. Shaping high-power IGBT switching transitions byactive voltage control for reduced EMI generation[J]. IEEE Transactions on Industry Applications, 2014, 51(2): 1669-1677.

WANG Y, PALMER P, LIMT C,et al. Real-time optimization of IGBT/diode cell switching under active voltage control[C]// 2006 Industry Applications Conference. Tampa, USA,IEEE, 2006: 2262-2268.

HU L, CHEN Y, AI S. A new two feed-back control method integrated in digital control method integrated in digital gate driver for large power IGBT[C]//2016 Information Technology, Networking, Electronic and Automation Control Conference. Chongqing, China, IEEE, 2016: 1153-1156.

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