Deng Min-lin, Liu Qiu-xiang, Li Wan-peng. Influence of Annealing Atmosphere on the Ferroelectric and Leakage Current Behavior of Bi2NiMnO6 Thin Films[J]. 2015, 32(4): 21-24. DOI: 10.3969/j.issn.1007-7162.2015.04.004.
Deng Min-lin, Liu Qiu-xiang, Li Wan-peng. Influence of Annealing Atmosphere on the Ferroelectric and Leakage Current Behavior of Bi2NiMnO6 Thin Films[J]. 2015, 32(4): 21-24. DOI: 10.3969/j.issn.1007-7162.2015.04.004.DOI:
buffered Si(100) substrate prepared by chemical solution deposition. The structure of the thin films is characterized by X-ray diffraction
and both the ferroelectric properties and leakage current behavior are measured by ferroelectric tester at room temperature. The results suggest that they have become crystalline phases in the two samples annealed in N
2
and O
2
respectively. The ferroelectric properties appear in all samples under room temperature and the BNMO sample shows a fairly low leakage current density. Furthermore
the m
echanism of electrical conductivity is also investigated in the paper.