颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展

饶永娴; 李杰; 黄虎一雄; 章金兵; 胡动力

doi:10.19912/j.0254-0096.tynxb.2024-2318

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颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展

更新时间：2026-07-21

- 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展
- 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展
- 太阳能学报 2026年47卷第5期页码：620-626
- 作者机构：
- 作者简介：
- 基金信息：
  
  宁波市自然基金重点项目（2022J148）;宁波市甬江人才工程创新人才项目（2021A-147-G;2022A-095-G）
- DOI：10.19912/j.0254-0096.tynxb.2024-2318
  中图分类号： TQ127
- 网络首发：2026-06-04，
  
  纸质出版：2026
- 稿件说明：
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饶永娴, 李杰, 黄虎一雄, 等. 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展[J]. 太阳能学报, 2026,47(5):620-626.

饶永娴, 李杰, 黄虎一雄, et al. 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展[J]. 2026, 47(5): 620-626.
饶永娴, 李杰, 黄虎一雄, 等. 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展[J]. 太阳能学报, 2026,47(5):620-626. DOI： 10.19912/j.0254-0096.tynxb.2024-2318.

饶永娴, 李杰, 黄虎一雄, et al. 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展[J]. 2026, 47(5): 620-626. DOI： 10.19912/j.0254-0096.tynxb.2024-2318.

摘要

高纯多晶硅是太阳能光伏和半导体的主要原材料

其制备方法主要有改良西门子法和硅烷流化床法。由于工艺的特殊性

硅烷流化床法制得的颗粒多晶硅中的硅粉含量比改良西门子法制得的棒状硅要高

这会在后续直拉单晶的过程中对热场和设备造成严重影响

同时还会影响单晶硅的质量。目前关于颗粒硅除尘的研究还处于起步阶段

市场上使用的除尘方法通常为物理分离法

但除尘效果并不显著。该文分析硅烷流化床法中硅粉形成的原因

阐述硅粉对直拉单晶硅的影响及相应的控制措施

并总结颗粒硅除尘的研究现状。最后

对未来有关颗粒硅浊度的研究发展提出建议。

Abstract

High-purity polysilicon is the main raw material for solar photovoltaics and semiconductors

and its preparation methods mainly include the modified Siemens process and the silane fluidized bed reactor （FBR） process. Due to the specificity of the processes

the silicon fines content in granular polysilicon produced by the silane FBR process is higher than that of rod-shaped silicon produced by the modified Siemens process

which can lead to severe impacts on the thermal field and equipment during the subsequent producing of the Czochralski monocrystalline silicon and also affect the quality of the monocrystalline silicon. Currently

research on dedusting of granular silicon is still in its infancy

and the dust removal methods commonly used in the market are typically physical separation methods

but the effectiveness is not significant. This paper analyzes the causes of fines formation in the silane FBR process

elaborates on the impact of silicon fines on Czochralski monocrystalline silicon and corresponding control measures

and summarizes the current research status of dedusting of granular silicon. Finally

suggestions for future research and development related to the turbidity of granular silicon are proposed.

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