基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展

胡梦琪; 苏炬; 王光红; 刁宏伟; 赵雷; 王文静

doi:10.19912/j.0254-0096.tynxb.2023-1755

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基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展

更新时间：2025-10-18

- 基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展
- RESEARCH PROGRESS OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS WITH METAL OXIDE CARRIER-SELECTIVE CONTACTS
- 太阳能学报 2025年46卷第3期页码：342-347
- 作者机构：
  
  1. 中国科学院电工研究所太阳能光伏与热利用重点实验室,北京 100190
  2. 中国科学院大学电子电气与通信工程学院,北京 100049
- 作者简介：
- 基金信息：
  
  国家自然基金区域创新发展联合基金（U21A2072）;国家自然科学基金（62174161）;江苏省碳达峰碳中和科技创新专项资金项目（BE2022021-4）
- DOI：10.19912/j.0254-0096.tynxb.2023-1755
  中图分类号： O472
- 网络出版：2025-04-07，
  
  纸质出版：2025
- 稿件说明：
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胡梦琪, 苏炬, 王光红, 刁宏伟, 赵雷, 王文静. 基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展[J]. 太阳能学报, 2025, 46(3): 342-347.

Hu Mengqi, Su Ju, Wang Guanghong, et al. RESEARCH PROGRESS OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS WITH METAL OXIDE CARRIER-SELECTIVE CONTACTS[J]. 2025, 46(3): 342-347.
胡梦琪, 苏炬, 王光红, 刁宏伟, 赵雷, 王文静. 基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展[J]. 太阳能学报, 2025, 46(3): 342-347. DOI： 10.19912/j.0254-0096.tynxb.2023-1755.

Hu Mengqi, Su Ju, Wang Guanghong, et al. RESEARCH PROGRESS OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS WITH METAL OXIDE CARRIER-SELECTIVE CONTACTS[J]. 2025, 46(3): 342-347. DOI： 10.19912/j.0254-0096.tynxb.2023-1755.

摘要

晶硅异质结（HJT）太阳电池的转换效率已达到26.81%

然而其使用有毒有害气体掺杂的传输层存在不可避免的寄生吸收损失

阻止了器件性能的进一步提升。因此

宽带隙非掺杂的钝化接触太阳电池受到极大关注。该文对载流子选择性传输原理、非掺杂钝化接触材料及其主要沉积方法、非掺杂空穴/电子选择性材料的研究现状及器件稳定性改善方式进行概述

并对钝化接触型非掺杂晶硅异质结太阳电池存在的问题和前景进行讨论。

Abstract

The conversion efficiency of crystalline silicon heterojunction （HJT） solar cells has reached 26.81%

however

there are unavoidable parasitic absorption losses in their transport layer doped with toxic and hazardous gases

preventing further improvement of device performance. Therefore

wide bandgap dopant-free passivated contact solar cells have received great attention. This paper provides an overview of the carrier-selective transport principle

dopant-free passivated contact materials and their main deposition methods

the current research status of dopant-free hole/electron-selective materials and the improvement of device stability. The problems and prospects of passivation contact type dopant-free crystalline silicon heterojunction solar cells are also discussed.

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references

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