无锡市检验检测认证研究院
纸质出版:2025
移动端阅览
孙晓寅, 林皓, 陈鹏, 等. p型PERC双面单晶硅光伏组件的PID研究[J]. 太阳能, 2025,(1):87-94.
孙晓寅, 林皓, 陈鹏, et al. p型PERC双面单晶硅光伏组件的PID研究[J]. 2025, (1): 87-94.
孙晓寅, 林皓, 陈鹏, 等. p型PERC双面单晶硅光伏组件的PID研究[J]. 太阳能, 2025,(1):87-94. DOI: 10.19911/j.1003-0417.tyn20240108.01.
孙晓寅, 林皓, 陈鹏, et al. p型PERC双面单晶硅光伏组件的PID研究[J]. 2025, (1): 87-94. DOI: 10.19911/j.1003-0417.tyn20240108.01.
对p型PERC双面单晶硅光伏组件在负偏压、正偏压下的电势诱导衰减(PID)效应进行了深入研究,并对此类光伏组件背面发生PID效应后的电性能恢复情况进行了研究。研究结果表明:1)在-1500 V偏压下进行PID测试后,在标准测试条件(STC)下,96 h PID测试后此类光伏组件背面的电性能急剧下降,正面的电性能也受到明显影响;在200 W/m
2
太阳辐照度条件下,此类光伏组件正面和背面的电性能损失更加明显。将PID测试延长至480 h后,与96 h的测试结果相比,此类光伏组件背面的最大输出功率、开路电压和短路电流都有不同程度的回升。这是因为当太阳电池处于负偏压时,正电荷被吸引到AlO
x
/SiN
x
钝化叠层,并消除了钝化层的场钝化效应;但是随着更多的正电荷被困在AlO
x
/SiN
x
钝化叠层中,太阳电池的背面产生了电子反转层,最终导致太阳电池的有效载流子寿命增加。2)在+1500 V偏压下进行96 h的PID测试后,此类光伏组件正面的电性能衰减可忽略不计,背面的电性能甚至还略有提高。这是因为当太阳电池处于正偏压时,负电荷被吸引到太阳电池的背面,然后积聚在AlO
x
/SiN
x
钝化叠层中;这些负电荷有助于将硅片中的少数载流子(电子)从背面排斥出去,从而提高此类光伏组件的电性能。3)此类光伏组件背面的极化型PID(PID-p)效应可以恢复,而且将光伏组件背面暴露在紫外线下可以大幅加快恢复的速度。对于实际在户外运行且具有大工作电压的光伏发电系统而言,此类光伏组件背面受到PID-p效应的影响最小甚至未受到其影响。
Bhang Byeong Gwan,Lee Wonbin,Kim Gyu Gwang,Choi Jin Ho,Park So Young,Ahn Hyung Keun.Power Performance of Bifacial c-Si PV Modules With Different Shading Ratios[J].IEEE Journal of Photovoltaics,2019.
Wei Luo,Yong Sheng Khoo,Jai Prakash Singh,Johnson Kai Chi Wong,Yan Wang,Armin G. Aberle,Seeram Ramakrishna.Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure[J].IEEE Journal of Photovoltaics,2018.
Deline Chris,MacAlpine Sara,Marion Bill,Toor Fatima,Asgharzadeh Amir,Stein Joshua S..Assessment of Bifacial Photovoltaic Module Power Rating Methodologies—Inside and Out[J].IEEE Journal of Photovoltaics,2017.
Wei Luo,Peter Hacke,Jai Prakash Singh,Jing Chai,Yan Wang,Seeram Ramakrishna,Armin G. Aberle,Yong Sheng Khoo.In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements[J].IEEE Journal of Photovoltaics,2017.
Steven P. Harvey,Jeffery A. Aguiar,Peter Hacke,Harvey Guthrey,Steve Johnston,Mowafak Al-Jassim.Sodium Accumulation at Potential-Induced Degradation Shunted Areas in Polycrystalline Silicon Modules[J].IEEE Journal of Photovoltaics,2016.
Andreas Halm,Andreas Schneider,Valentin D. Mihailetchi,Lejo J. Koduvelikulathu,Lacramiora M. Popescu,Giuseppe Galbiati,Haifeng Chu,Radovan Kopecek.Potential-induced Degradation for Encapsulated n -type IBC Solar Cells with Front Floating Emitter[J].Energy Procedia,2015.
Yusufoglu, Ufuk A.,Pletzer, Tobias M.,Koduvelikulathu, Lejo Joseph,Comparotto, Corrado,Kopecek, Radovan,Kurz, Heinrich.Analysis of the Annual Performance of Bifacial Modules and Optimization Methods[J].IEEE journal of photovoltaics,2015.
Volker Naumann,Torsten Geppert,Stephan Großer,Daniel Wichmann,Hans-Joachim Krokoszinski,Martina Werner,Christian Hagendorf.Potential-induced Degradation at Interdigitated Back Contact Solar Cells[J].Energy Procedia,2014.
Volker Naumann,Dominik Lausch,Angelika Hähnel,Jan Bauer,Otwin Breitenstein,Andreas Graff,Martina Werner,Sina Swatek,Stephan Großer,Jörg Bagdahn,Christian Hagendorf.Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells[J].Solar Energy Materials and Solar Cells,2014.
Lausch, D.,Naumann, V.,Breitenstein, O.,Bauer, J..Potential-Induced Degradation (PID): Introduction of a Novel Test Approach and Explanation of Increased Depletion Region Recombination[J].IEEE journal of photovoltaics,2014.
Volker Naumann,Dominik Lausch,Andreas Graff,Martina Werner,Sina Swatek,Jan Bauer,Angelika Hähnel,Otwin Breitenstein,Stephan Großer,Jörg Bagdahn,Christian Hagendorf.The role of stacking faults for the formation of shunts during potential‐induced degradation of crystalline Si solar cells[J].physica status solidi (RRL) – Rapid Research Letters,2013.
Weber K. J.,Jin H..Improved silicon surface passivation achieved by negatively charged silicon nitride films[J].Applied Physics Letters,2009.
İlker Ay,Hüseyin Tolunay.Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films[J].Solar Energy Materials and Solar Cells,2003.
Aber,e Armin G.,Glunz Stefan,Warta Wilhelm.Field effect passivation of high efficiency silicon solar cells[J].Solar Energy Materials and Solar Cells,1993(2).
0
浏览量
123
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010802024621