Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off

Teng Wen; Xiang Cui; Sijia Liu; Xuebao Li; Zhibin Zhao

doi:10.17775/CSEEJPES.2021.01390

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Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off

Regular Papers | 更新时间：2026-10-15

- Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off
- Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off
- 中国电机工程学会电力与能源系统学报(英文) 2022年8卷第2期页码：609-620
- 作者机构：
  
  State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University,Beijing,China
- 作者简介：
- 基金信息：
- DOI：10.17775/CSEEJPES.2021.01390
  中图分类号：
- 纸质出版：2022-03-01
- 稿件说明：
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Teng Wen, Xiang Cui, Sijia Liu, 等. Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off[J]. 中国电机工程学会电力与能源系统学报(英文), 2022,8(2):609-620.

Teng Wen, Xiang Cui, Sijia Liu, et al. Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off[J]. CSEE Journal of Power and Energy Systems, 2022, 8(2): 609-620.
Teng Wen, Xiang Cui, Sijia Liu, 等. Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off[J]. 中国电机工程学会电力与能源系统学报(英文), 2022,8(2):609-620. DOI： 10.17775/CSEEJPES.2021.01390.

Teng Wen, Xiang Cui, Sijia Liu, et al. Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off[J]. CSEE Journal of Power and Energy Systems, 2022, 8(2): 609-620. DOI： 10.17775/CSEEJPES.2021.01390.

摘要

Abstract

The high-voltage high-power press-packed IGBT (PPI) devices are the key component of the DC transmission apparatus. A PPI device is composed of several PPI submodules. In general

the PPI submodule works in a state of repetitive turn-on and turn-off

and the corresponding working voltage is the positive periodic square waveform (PPSW) voltage

which is much different from the conventional AC or DC voltage. In ad-dition

insulation capability is one of the most critical challenges in the design and fabrication of PPI devices. To improve the insulation capability of the device

composite insulation structures with multiple dielectrics are usually employed. Under the PPSW voltage

it is essential to analyze the transient electric field to solve the insulation challenge of the PPI devices. However

the electric field of the PPI is often calculated under the electrostatic field or DC field. Moreover

the transient characteristics of the electric field are ignored. Therefore

this paper focuses on the analysis of the transient characteristics of the electric field of the PPI submodule under the PPSW voltage. The influences of the waveform parameters of the PPSW voltage on the transient characteristics are demonstrated in detail. This study is significant for the insulation analysis and design of the PPIs.

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