High-voltage and high-power IGBT chips have a noticeable carrier storage effect

which is related to the load current. However

the research on the carrier storage effect of existing IGBT behavior models is insufficient. In this paper

An improved behavioral model for high-voltage and high-power insulated gate bipolar transistor (IGBT) chips is proposed

which could be used under different load conditions. The problems for applying the traditional behavioral model to more load conditions are discussed. Carrier behavior

in the wide base region

is analyzed

and the analytical expression of the carrier-storage-effect equivalent capacitance and the initial value of the tail current are provided to establish an improved IGBT behavioral model. A corresponding parameter extraction method is proposed. In order to verify the improved behavioral model

an experimental platform is built for resistive load and inductive load

and the results show that the accuracy of the improved behavioral model is much better than that of the traditional model. In addition

the errors of the improved model are within 12.5% under different current and load types. Considering that the maximum error of other models

which could be applied in a variety of load conditions

is more than 25%

the accuracy of the model proposed in this paper is excellent.