1. 国网四川省电力公司电力科学研究院
2. 国网四川省电力公司阿坝供电公司
3. 国网四川省电力公司天府新区供电公司
4. 四川大学电气工程学院
纸质出版:2025
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雷潇, 毕峻, 伍飞飞, 等. 掺杂Ag+高电压梯度ZnO压敏电阻的交流老化性能研究[J]. 四川电力技术, 2025,(4):54-58.
雷潇, 毕峻, 伍飞飞, et al. 掺杂Ag+高电压梯度ZnO压敏电阻的交流老化性能研究[J]. 2025, (4): 54-58.
雷潇, 毕峻, 伍飞飞, 等. 掺杂Ag+高电压梯度ZnO压敏电阻的交流老化性能研究[J]. 四川电力技术, 2025,(4):54-58. DOI: 10.16527/j.issn.1003-6954.20250408.
雷潇, 毕峻, 伍飞飞, et al. 掺杂Ag+高电压梯度ZnO压敏电阻的交流老化性能研究[J]. 2025, (4): 54-58. DOI: 10.16527/j.issn.1003-6954.20250408.
高电压梯度ZnO压敏电阻因应能承受更高的工作电压,已逐渐应用于电力设备的过电压保护。然而,交流老化是高梯度压敏电阻在特高压应用中面临的现实问题。Ag
+
掺杂ZnO对提高压敏电阻的性能是有效的。为了确定提高压敏电阻长期稳定性所需的最佳掺杂浓度,针对掺杂不同浓度银氧化物的ZnO压敏电阻研究了其微观结构、宏观电气性能和势垒电位,并从理论上解释了Ag
+
提高抗老化能力的机理。研究结果表明,银氧化物掺杂含量为0.011%时,高电压梯度ZnO压敏电阻最佳抗老化性能得以实现。
High-voltage gradient ZnO varistors have gradually been applied to overvoltage protection of power equipment due to their ability to withstand higher working voltages. However
AC aging is a practical problem faced by high-voltage gradient varistors in ultra-high voltage applications. Ag+-doped ZnO is effective in improving the performance of varistors. In order to determine the optimal doping concentration required by the improvement of long-term stability of varistors
the microstructure
macroscopic electrical properties and barrier potential of ZnO varistors doped with different concentrations of silver oxides are studied
and the mechanism for improving anti-aging ability by Ag+ is theoretically explained. The research results show that when the doping amount of silver oxide is 0.011%
the optimal anti-aging performance of high-voltage gradient ZnO varistors can be achieved.
王振林,姚政,徐素萍,彭敏.优化银玻璃粉体添加与热处理工艺以提高ZnO压敏电阻老化性能[J].电瓷避雷器,2014(03).
刘磊,李小鹏,张纯,黄宇,张曾,张华杰,曾雪洋.±800 kV雅砻江换流站BP13高压电容器不平衡电流及过电压分析[J].四川电力技术,2023(02).
胡思宇,黄佐流,刘守豹,郭海霞,王世旭,张丰.基于避雷器尾端电流监测的电力系统过电压反演[J].四川电力技术,2023(02).
杨莉禹,任鑫,宁宇,刘晓曼,高丽,游俊玮,姚政.施主掺杂提高ZnO压敏电阻的冲击稳定性[J].陶瓷学报,2024(02).
孟鹏飞,殷越,缪奎,王磊,秦锋,刘政,胡军.配方体系与烧结工艺对避雷器压敏电阻宏观性能的影响机制[J].高电压技术,2024(08).
M. A. Ramírez,P. R. Bueno,W. C. Ribeiro,J. A. Varela,D. A. Bonett,J. M. Villa,M. A. Márquez,C. R. Rojo.The failure analyses on ZnO varistors used in high tension devices[J].Journal of Materials Science,2005.
M A Ramírez,W Bassi,P R Bueno,E Longo,J A Varela.Comparative degradation of ZnO- and SnO 2 -based polycrystalline non-ohmic devices by current pulse stress[J ] .Journal of Physics D: Applied Physics,2008.
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