1. 辽宁工程技术大学 力学与工程学院,辽宁,阜新,123000
2. 辽宁工程技术大学 理学院,辽宁,阜新,123000
网络首发:2025-11-11,
纸质出版:2025-11-11
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赵扬锋, 龚政, 王凯兴, 等. 不同粗糙度岩石界面断层滑移失稳过程电荷感应信号特征分析[J]. 岩土力学, 2025,46(11):3355-3370.
ZHAO Yang-feng, GONG Zheng, WANG Kai-xing, et al. Characterization of charge sensing signals during slip destabilization of faults with different roughness rock interfaces[J]. 2025, 46(11): 3355-3370.
赵扬锋, 龚政, 王凯兴, 等. 不同粗糙度岩石界面断层滑移失稳过程电荷感应信号特征分析[J]. 岩土力学, 2025,46(11):3355-3370. DOI: 10.16285/j.rsm.2024.1541.
ZHAO Yang-feng, GONG Zheng, WANG Kai-xing, et al. Characterization of charge sensing signals during slip destabilization of faults with different roughness rock interfaces[J]. 2025, 46(11): 3355-3370. DOI: 10.16285/j.rsm.2024.1541.
为探究岩石界面粗糙度对断层滑移过程电荷感应信号特征的影响,研究了不同粗糙度岩石组合结构在不同竖向荷载下双面剪切试验滑移全过程多通道电荷感应信号波形、电荷累计速度、分形维数和主频区-次主频区指标的时频特征。研究结果表明:(1)弹性变形阶段断层面出现的局部微破裂成核导致电荷感应信号波形表现为多次电荷感应簇并出现最大值,这种电荷感应簇随着界面粗糙度和竖向荷载的提高而增多,进入启滑阶段则变为密集的小幅信号。(2)随断层界面粗糙度和竖向荷载增加,电荷累计速度和分形维数波动更为明显,且与电荷感应信号波形变化高度关联。弹性变形阶段电荷累计速度表现为“主体慢增,多点突增”,每次电荷感应簇都伴随着分形维数的“先升维,后降维”现象,主频区位于低频域,次主频区位于高频域;启滑阶段电荷累计速度转变为全面快速增加,分形维数整体不断降维,主频区和次主频区表现出“平移互换”现象,主频区右移至高频域,次主频区则左移至低频域,且各滑移阶段电荷信号主频均落于滑移全过程共有频率混叠域内。(3)对比小波变换、短时傅里叶变换和S变换3种时频变换方法在滑移失稳前的时频分辨率与时频聚焦性发现,在低频域,小波变换表现最好,短时傅里叶变换次之,S变换最差,而在高频域,S变换表现最好,小波变换次之,短时傅里叶变换最差。(4)断层滑移失稳过程中不同位置传感器电荷信号的差异在启滑阶段前主要与局部集中微破裂引起的电荷特定区域聚集有关,在启滑阶段后则主要由滑移面与传感器之间相对位置的错动变化引起。
In order to investigate the influence of rock interface roughness on the characteristics of the charge induction signal during fault slip
the time-frequency characteristics of the multi-channel charge induction signal waveforms
the cumulative velocity of charge
the fractal dimension
and the primary and secondary frequency zones of the rock assemblage structure with different roughness during the slip process in the double-sided shear test under different vertical loads were investigated. The results show that: (1) The localized micro-rupture nucleation in the elastic deformation stage leads to multiple charge induction clusters with maximum values
which increase with the increase of interface roughness and vertical load
and then become dense and small-amplitude signals when entering into the start-slip stage. (2) With the increase of interface roughness and vertical load
the fluctuation of the accumulated charge velocity and fractal dimension are more obvious and highly correlated with the change of the waveform of the charge induction signal. In the elastic deformation stage
the accumulated charge velocity shows “slow increase in the main body and sudden increase in multiple points”
and each charge induction cluster is accompanied by the phenomenon of “first ascending and then descending” of the fractal dimension
with the main frequency area located in the low-frequency domain and the sub-main frequency area located in the high-frequency domain. In the start-slip stage
the accumulated charge velocity changes to an overall rapid increase and the fractal dimension fluctuates more obviously with the increase of fault interface roughness and vertical loading. During the start-slip stage
the charge accumulation rate changes to an overall rapid increase
and the fractal dimension is continuously downgraded
and the primary and secondary frequency regions show the phenomenon of “translational interchange”
with the primary frequency region shifted right to the high-frequency domain
and the secondary frequency region shifted left to the low-frequency domain
and the primary frequency of the charge signals at each slip stage falls into the frequency aliasing domain common to the whole process of slipping. (3) Comparing the time-frequency resolution and time-frequency focusing of the three time-frequency transform methods
wavelet transform
short-time Fourier transform and S transform
it is found that the wavelet transform performs the best in the low-frequency domain
the short-time Fourier transform the second
and the S transform the worst
while in the high-frequency domain
the S transform performs the best
the wavelet transform the second
and the short-time Fourier transform the worst. (4) Differences in charge signals of sensors at different locations during fault slip destabilization are mainly related to the aggregation of charges in specific regions caused by locally concentrated micro-ruptures before the start-slip phase
and are mainly caused by the change of misalignment of the relative positions between the slip surface and the sensors after the start-slip phase.
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