Power semiconductor devices are the core components of power electronic equipment. China is highly dependent on imports for simulation softwares of semiconductor devices TCAD(technology computer aided design). Based on the technical accumulation of 2D simulation tool development since 2019

we has independently developed a 3D simulation tool for power semiconductor devices. This paper analyzes the main challenges of 3D simulations for power semiconductor devices compared with 2D simulations

including the increase in the number of degrees of freedom

the complexity in extending control volume construction and the difficulty in accurately computing the geometric coefficients. Meanwhile

the key points are elaborated

including the construction of polyhedral control volumes

the 3D extension of the Scharfetter-Gummel scheme based on the finite volume method

and highly accurate geometric coefficient calculations. Systematic comparisons of simulation results are conducted with the commercial software Synopsys TCAD Sentaurus Device under the conditions of various device types

operating conditions

and circuit topologies. The simulation results of the developed 3D tool

including the steady-state microscopic physical quantities and transient switching characteristics

are in high agreement with those of the commercial software

which verifies the accuracy of the independently developed 3D simulation tool.