1. 华中科技大学电气与电子工程学院,武汉,430077
2. 强电磁技术全国重点实验室(华中科技大学),武汉,430074
3. 中国电力科学研究院有限公司,北京,100192
纸质出版:2026
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朱厚达, 李红斌, 邬雄, 等. 基于高阻镀层母线的智能量测设备强电磁防护方法[J]. 高电压技术, 2026,52(2):560-571.
ZHU Houda, LI Hongbin, WU Xiong, et al. 基于高阻镀层母线的智能量测设备强电磁防护方法[J]. 2026, 52(2): 560-571.
朱厚达, 李红斌, 邬雄, 等. 基于高阻镀层母线的智能量测设备强电磁防护方法[J]. 高电压技术, 2026,52(2):560-571. DOI: 10.13336/j.1003-6520.hve.20251284.
ZHU Houda, LI Hongbin, WU Xiong, et al. 基于高阻镀层母线的智能量测设备强电磁防护方法[J]. 2026, 52(2): 560-571. DOI: 10.13336/j.1003-6520.hve.20251284.
面向新型电力系统的数字化转型趋势,电力量测设备开始了智能化、小型化发展,通常以智能组件形式嵌入于一次高压设备,面临电磁兼容新问题:特快速瞬态过电压(very fast transient overvoltage,VFTO)等强电磁干扰源具备强耦合能力,其高频成分(1~30 MHz)极易引发设备电磁共振,对弱电组件造成较强冲击,可能危害设备乃至系统的稳定运行,常规峰值抑制型防护措施难以有效应对其中的高频成分。对此,该文构建了VFTO阶梯波的传导衰变与折反射模型,发现气体绝缘开关设备(gas insulated switchgear,GIS)母线分布电阻的电磁干扰抑制作用,进而提出了高阻镀层母线,在不改变母线主体结构的前提下,在其表面敷设高磁导率、低电导率镀层以实现电阻增长。在此基础上,分析母线分布电阻的关键影响因素,据此提出高阻镀层母线的系统性设计方案,并开展场仿真以验证其绝缘性能和载流能力。最后,加工高阻镀层母线样品,并开展等效试验,结果表明:应用镀层母线后,1~30 MHz范围内电磁干扰的累计有效值降低22.66%,验证了该文方法在强电磁干扰高频成分抑制方面的有效性,保证了智能量测设备的可靠运行。
Digital transformation toward new-type power systems has driven the intelligent and miniaturized development of electric power measuring equipment. When embedded in primary high-voltage devices as intelligent components
this equipment faces new electromagnetic compatibility (EMC) challenges. Strong electromagnetic interference (EMI) sources
particularly very fast transient overvoltage (VFTO)
possess strong coupling capabilities
and their high-frequency components (1~30 MHz) readily induce electromagnetic resonance in equipment
significantly impact weak electronic components
and potentially endanger the stable operation of equipment and even the entire system. Conventional peak-suppression protection methods show limited effectiveness against these high-frequency components. To address this issue
this paper develops a model to characterize the propagation
attenuation
and reflection of VFTO step-waves. This model reveals how distributed resistance in gas insulated switchgear (GIS) busbars suppresses EMI
leading to the proposal of a high-resistance coating busbar. This design applies a coating with high magnetic permeability and low electrical conductivity to the busbar surface
increasing resistance without changing the main busbar structure. On this basis
the key factors influencing the busbar’s distributed resistance are analyzed
and a systematic design scheme for the high-resistance coating busbar is subsequently proposed. Field simulations are conducted to verify its insulation performance and current-carrying capacity. Finally
high-resistance coating busbar samples are fabricated and subjected to equivalent tests. The results indicate that the application of the coated busbar reduces the cumulative root-mean-square value of EMI in the 1~30 MHz range by 22.66%
thereby validating the effectiveness of the proposed method in suppressing high-frequency components of strong EMI
and ensuring reliable operation of intelligent measuring equipment.
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