1. 电工材料电气绝缘全国重点实验室 (西安交通大学),西安,710049
2. 中国电力科学研究院有限公司,北京,100192
收稿:2025-09-30,
纸质出版:2025
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李晓昂, 杨晓宇, 吕肖肖, 等. 工频叠加冲击电压下GIS绝缘件沿面异物闪络电压与放电路径特性[J]. 高电压技术, 2025,51(9):4698-4705.
LI Xiaoang, YANG Xiaoyu, LYU Xiaoxiao, et al. 工频叠加冲击电压下GIS绝缘件沿面异物闪络电压与放电路径特性[J]. 2025, 51(9): 4698-4705.
李晓昂, 杨晓宇, 吕肖肖, 等. 工频叠加冲击电压下GIS绝缘件沿面异物闪络电压与放电路径特性[J]. 高电压技术, 2025,51(9):4698-4705. DOI: 10.13336/j.1003-6520.hve.20241816.
LI Xiaoang, YANG Xiaoyu, LYU Xiaoxiao, et al. 工频叠加冲击电压下GIS绝缘件沿面异物闪络电压与放电路径特性[J]. 2025, 51(9): 4698-4705. DOI: 10.13336/j.1003-6520.hve.20241816.
金属封闭组合电器设备(gas-insulated switchgear,GIS)常遭受雷电、开关操作暂态等过电压侵袭,实际承受工频叠加冲击电压,一旦存在GIS绝缘件沿面异物缺陷,放电概率会显著增加,严重威胁设备安全运行。为此搭建工频叠加冲击电压试验平台,研究GIS绝缘件沿面异物闪络电压和放电路径统计规律,对比分析叠加相位、异物尺寸的影响规律,揭示工频叠加冲击电压下沿面闪络机理。结果表明,不同叠加相位和极性下,闪络路径会呈现“竖直发展”和“绕开”2种典型模式,进而显著影响叠加放电电压U50%。当反极性叠加时,闪络路径沿绝缘子电场中心线方向发展,放电出射角度θ≤25°,表明缺陷产生空间电荷促进了叠加电压下的放电发展,此时,U50%较雷电冲击击穿电压Us下降程度很大,闪络电压变化率k高达27.8%;同极性叠加时,闪络路径会“绕开”缺陷前方区域,放电出射角度θ明显增大,在40°~90°之间,且分散性较大,此时,缺陷产生空间电荷阻碍了叠加电压下的放电发展,U50%降幅很小。此外,微粒曲率亦显著影响闪络路径和放电电压,尖锐微粒导致的k更大。在AC(φ=180°)/正LI时,随着微粒曲率从0.15 mm增加到0.5 mm,k值由15.8%减小至11.1%。该研究为揭示工频叠加冲击下GIS沿面闪络机理、提高GIS绝缘可靠性提供了一定参考和依据。
Gas-insulated switchgear (GIS) is often subjected to overvoltages from lightning strikes
transient switching operations
and the superposition of power-frequency impulse voltages. The presence of foreign object defects along the insulation components of GIS significantly increases the probability of discharge
posing a serious threat to the safe operation of the equipment. This study establishes an experimental platform for high-frequency superimposed impulse voltage
aiming to investigate the statistical characteristics of flashover paths and discharge voltages along the surface of GIS insulation components caused by foreign objects. By comparing and analyzing the influence of superimposed phases and foreign object sizes
this study aims to reveal the flashover mechanism along the surface under high-frequency superimposed impulse voltages. The results indicate that
under different superimposed phases and polarities
flashover paths exhibit two typical patterns: "vertical development" and "bypass"
significantly impacting the superimposed discharge voltage U50%. When subjected to reverse polarity superposition
the flashover path develops along the centerline of the insulator electric field
with a discharge emission angle θ≤25°. This indicates that defect-induced space charge promotes discharge propagation under superimposed voltage. At this point
the flashover voltage U50% experiences a significant decrease compared to the lightning impulse breakdown voltage Us
with a high flashover voltage variation rate k of up to 27.8%. Conversely
under same-polarity superposition
the flashover path tends to "bypass" the area in front of the defect
resulting in a notably increased discharge emission angle θ ranging between 40° and 90°
with higher dispersion. In this scenario
defect-induced space charge impedes discharge development under superimposed voltage
leading to a minimal reduction in U50%. Furthermore
particle curvature significantly influences the flashover path and discharge voltage
and sharper particles result in a higher k value. When AC(φ=180°)/+LI
as the particle curvature increases from 0.15 mm to 0.5 mm
the k value decreases from 15.8% to 11.1%. This study provides insights and a basis for enhancing the insulation reliability of GIS under high-frequency superimposed impulses.
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