The Si/SiC hybrid switch (Si/SiC HyS) is composed of a low-current SiC metal oxide semiconductor field effect transistor (MOSFET) and a high-current Si insulated gate bipolar transistor (IGBT) in parallel. It has attracted much attention because of its excellent performance of low switching loss and high switching speed of MOSFET and the low cost advantage of IGBT. However

the switching rates of MOSFET and IGBT are quite different. During the switching transient process under heavy load

MOSFET and IGBT are prone to the problem of peak current exceeding the limit

which threatens the reliable operation during the full working domain of the HyS. This paper proposes a switching strategy for Si/SiC HyS based on dynamic configuration of gate mode in full working domain. Firstly

the influence mechanism of the gate voltage on the switching transient current distribution of Si/SiC HyS is analyzed in detail

and the mathematical model of the peak current with respect to the gate voltage is established. Considering the current stress constraint

the whole working domain is divided into three load intervals. Guided by the principle that the turn-on and turn-off overcurrent ratios are capped at 1

this study takes the minimum loss of HyS as the optimization objective to dynamically optimize the driving sequence and gate voltage across different load intervals. Finally

the experimental results show that compared with the traditional strategies

the proposed switching strategy can achieve lower loss while ensuring that MOSFET and IGBT are free from overcurrent vulnerabilities in the whole working domain.