Fluorination modification of poly-m-phenylene isophthalamide (PMIA) is an effective strategy to optimize its trap characteristics and improve surface flashover voltage. This article first establishes a simple and efficient plasma fluorination platform

prepares aramid paper fluorination samples. Secondly

the fluorination modification effects are characterized using X-ray photoelectron spectroscopy (XPS)

and the grafting models as well as their regulation mechanisms on trap parameters are investigated through quantum chemical calculations. Finally

the dielectric properties are evaluated by measuring the frequency domain dielectric spectra of the samples

and calculating the dipole moments

polarizabilities

and ionization energies of each molecular system under different electric fields. The results show that fluorination treatment for 5 min yields an effectively fluorinated sample

and the plasma CF3+/CF2+ forms a stable grafted structure with PMIA amide groups. The PMIA-g-CF2 configuration reduces the electron trap energy level of PMIA molecules from 2.41 eV to 1.64 eV

and increases the hole trap energy level from 1.27 eV to 1.79 eV. Shallow electron traps and deeper hole traps can improve the surface conductivity of the medium and suppress the development of gas flow

significantly improving the surface flashover performance. In addition

exploration of fluorination effects on PMIA dielectric properties at the atomic and molecular level reveals that PMIA-g-CF2 molecules have excellent dielectric properties and are the most promising modified configuration for application.