Traditional atmospheric pressure plasma cleaning techniques encounter limitations in photoresist removal from wafer surfaces

including limited area coverage and risk of sample damage. To address these challenges

this study innovatively introduces a microtubular array dielectric barrier discharge (DBD) plasma cleaning technology. This technique features a sophisticated design of interlaced high- and low-voltage microtubular dielectric tube electrodes

synergistically integrated with vertically injected high-speed gas jets. This unique configuration markedly expands the plasma’s footprint and drastically enhances the precision and efficiency of active particle delivery to the wafer surface

facilitating rapid

efficient

and non-invasive photoresist removal. The study investigates the impact of crucial parameters

including cleaning distance

cleaning time

discharge voltage

and gas flow rate

on photoresist removal efficiency

elucidating their underlying mechanisms. Advanced characterization tools

including water contact angle measurement

atomic force microscopy (AFM)

X-ray photoelectron spectroscopy (XPS)

and Fourier transform infrared spectroscopy (FTIR)

are employed to delve into the effects of plasma cleaning on wafer surface properties

encompassing hydrophilicity

roughness

elemental composition

and surface functional group transformations. Our experimental findings reveal that under optimized conditions (11 kV discharge voltage

0.5 mm cleaning distance

180 s cleaning duration

and 1 m/s gas flow rate)

a remarkable photoresist removal efficiency of 81.6% is achieved. Critically

this high level of cleaning performance is accomplished without compromising the wafer surface flatness or morphological integrity

indicating minimal to no discernible damage. Furthermore

both FTIR and XPS analyses confirm the effective elimination of photoresist residues and their associated chemical bonds to the wafer surface

while the introduction of polar functional groups

notably hydroxyls drastically enhances the wafer’s surface hydrophilicity (evidenced by a significant reduction in contact angle from 92.6° to 19.8°). This profound improvement in wettability establishes an optimal surface condition for subsequent deposition and doping processes

fostering uniform material distribution and efficient dopant penetration. Consequently

our research significantly contributes to the refinement of wafer manufacturing processes and the enhancement of device performance. Finally

the possible mechanisms underlying the removal of photoresist from the wafer surface during plasma cleaning are elucidated based on density functional theory (DFT) calculations.