In multi-chip parallel silicon carbide (SiC) half-bridge modules

chip current imbalance can easily lead to overcurrent failure of some chips. Monitoring the current of each chip inside the module is an effective way to achieve chip-level protection

fault diagnosis and active current sharing to improve the reliability of the module. Aiming at the problem of measuring the current distribution inside the module

a SiC half-bridge module with an integrated chip-level current measurement circuit board is developed. The integrated circuit board of the module provides low inductance power circuit (10.5 nH) and driver circuit (8.2 nH for the upper arm and 7.8 nH for the lower arm) connections while realizing full chip current measurement. The current measurement coil inside the board has a high-frequency bandwidth of 163 MHz

and the relative deviation of transient current measurement is less than 3%. A single measurement coil can simultaneously measure the SiC MOSFET switching current and diode freewheeling current. Using coils of half the quantity of chips

the current distribution of all chips can be measured. The accuracy and validity of the current distribution measurement of parallel chips under different static parameters and driving resistances are also verified by dynamic characteristic test experiments.