As the insulated gate bipolar transistor (IGBT) continues to evolve toward high-power and high-voltage operation

the device is faced with the risk of temperature overheating

breakdown failures

material ruptures

and other failures inside the device. In order to meet the increasingly harsh operating environment of the IGBT

there is an urgent need to develop a high-performance liquid crystalline epoxy potting material. In this paper

a biphenyl-type liquid crystal epoxy 4

4-biphenyldiglycidyl ether (BP) is prepared

and the effect laws of curing temperature and co-mingled bisphenol A epoxy system (EB-BP%) on the electrical insulating properties and thermo-mechanical properties of BP are explored. The results show that BP with sulfonamide (SAA) exhibits a distinct spherical liquid crystalline domain morphology at a curing temperature of 170℃ (BS-170)

and the thermal conductivity (λ) and breakdown field strength (Eb) of BS-170 are 0.397 W·m−1·K−1 and 47.403 kV·mm−1

respectively

which are 67.5% and 6% higher than those of bisphenol A epoxy. The λ of EB-30 in the blended system of BP and bisphenol A epoxy reaches 0.301 W·m−1·K−1

which is 28.6% higher than that of bisphenol A epoxy. In addition

EB-30 exhibits excellent tensile strength and elongation at break. Therefore

BP/EB shows better overall performance when used as an IGBT encapsulation material. This study can provide effective ideas and theoretical basis for the development of new high-performance insulating materials for IGBT encapsulation.