3D NAND闪存多维度噪声耦合错误检测及信道建模

李应钊; 朱广平; 韩国军

doi:10.12052/gdutxb.250019

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3D NAND闪存多维度噪声耦合错误检测及信道建模

信息与通信工程 | 更新时间：2026-05-27

- 3D NAND闪存多维度噪声耦合错误检测及信道建模
- Multi-dimensional Noise Coupling Error Detection and Channel Modeling for 3D NAND Flash Memory
- 广东工业大学学报 2025年42卷第6期页码：86-94
- 作者机构：
  
  广东工业大学信息工程学院,广东,广州,510006
- 作者简介：
  
  李应钊(1999–) ，男，硕士研究生，主要研究方向为NAND特性分析，E-mail：2112203109@mail2.gdut.edu.cn
  韩国军(1974–) ，男，教授，博士，主要研究方向为信息论与差错控制编译码技术、存储器件与系统、智能通信与车联网等，E-mail：gjhan@gdut.edu.cn
- 基金信息：
  
  NSFC-广东省联合基金资助项目(U2001203)
- DOI：10.12052/gdutxb.250019
  中图分类号： TP333
- 纸质出版：2025
- 稿件说明：
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李应钊, 朱广平, 韩国军. 3D NAND闪存多维度噪声耦合错误检测及信道建模[J]. 广东工业大学学报, 2025, 42(6): 86–94.

Li Yingzhao, Zhu Guangping, Han Guojun. Multi-dimensional Noise Coupling Error Detection and Channel Modeling for 3D NAND Flash Memory[J]. 2025, 42(6): 86-94.
李应钊, 朱广平, 韩国军. 3D NAND闪存多维度噪声耦合错误检测及信道建模[J]. 广东工业大学学报, 2025, 42(6): 86–94. DOI： 10.12052/gdutxb.250019

Li Yingzhao, Zhu Guangping, Han Guojun. Multi-dimensional Noise Coupling Error Detection and Channel Modeling for 3D NAND Flash Memory[J]. 2025, 42(6): 86-94. DOI： 10.12052/gdutxb.250019.

摘要

高性能、高存储密度且低功耗的3D NAND闪存已逐渐成为主流数据存储介质。然而，其可靠性受到擦写寿命有限、数据保持能力不足、读干扰以及层间差异等噪声因素的显著影响。针对这一问题，本文开展了3D NAND闪存的实际加噪测试实验，系统研究了不同噪声耦合条件下的误码率表现。通过对测试数据的深入分析，提取了对应的阈值电压分布特征，并构建了适应不同噪声条件的参考电压模型，以优化闪存的可靠性。实验结果表明，该参考电压模型可显著降低3D NAND闪存在噪声干扰下的误码率，与默认参考电压相比，误码率降低高达46%。本文提出的参考电压模型为提升3D NAND闪存在噪声环境下的存储可靠性提供了有效技术手段，有望推动其在高可靠性存储领域的广泛应用。

Abstract

3D NAND Flash memory has emerged as a mainstream data storage medium due to its high performance

high storage density and low power consumption. However

its reliability is significantly affected by multiple factors such as limited program/erase endurance

data retention issues

read disturb

and inter-layer variations

which introduce noise and degrade performance. To address these challenges

this paper performs noise injection experiments on 3D NAND Flash memory to systematically investigate the bit error rate (BER) under various noise coupling conditions. By analyzing the experimentalresults

the corresponding threshold voltage distributions were extracted

and a reference voltage model tailored to different noise conditions was developed to improve the reliability of the Flash memory. Experimental results demonstrate that the proposed reference voltage model effectively reduces the BER of 3D NAND Flash memory under noise interference by up to 46% when compared to the default reference voltage. The reference voltage model provides an effective technical solution to improve the storage reliability of 3D NAND Flash memory in noisy environments

and it is expected to promote its wide application in high-reliability storage domains.

关键词

Keywords

references

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