不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究

刘亚群; 李希越; 章国豪

doi:10.12052/gdutxb.220158

欢迎来到能源电力期刊网！

English Version 期刊登录

您当前的位置：

首页 >

文章列表页 >

不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究

综合研究 | 更新时间：2026-05-27

- 不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究
- Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations
- 广东工业大学学报 2024年41卷第1期页码：119-126
- 作者机构：
  
  1. 广东工业大学信息工程学院,广东,广州,510006
  2. 广东工业大学集成电路学院,广东,广州,510006
- 作者简介：
  
  刘亚群 (1992–)，女，博士研究生，主要研究方向为半导体器件建模
  李希越 (1986–)，男，讲师，博士，主要研究方向为半导体器件建模，E-mail：lixiyue915@gdut.edu.cn
- 基金信息：
  
  国家重点研发计划项目(2018YFB1802100)
- DOI：10.12052/gdutxb.220158
  中图分类号： TN301
- 网络首发：2024-01-25，
  
  纸质出版：2024
- 稿件说明：
移动端阅览
刘亚群, 李希越, 章国豪. 不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究[J]. 广东工业大学学报, 2024, 41(1): 119-126.

Liu Ya-qun, Li Xi-yue, Zhang Gary. Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations[J]. 2024, 41(1): 119-126.
刘亚群, 李希越, 章国豪. 不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究[J]. 广东工业大学学报, 2024, 41(1): 119-126. DOI： 10.12052/gdutxb.220158.

Liu Ya-qun, Li Xi-yue, Zhang Gary. Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations[J]. 2024, 41(1): 119-126. DOI： 10.12052/gdutxb.220158.

摘要

为深刻理解应变异质结量子阱结构的物理性质，帮助改进基于宽禁带氮化物半导体器件的设计，本文基于六带应力相关的k·p哈密顿量与自洽薛定谔−泊松方程建立了在场约束效应下极性 (0001)、半极性 (

$10\bar 12 $

img text_id='Z-20230525091707' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091707.jpg'>

) 及非极性 (

$10\bar 10 $

img text_id='Z-20230525091744' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091744.jpg'>

) 晶面的纤锌矿GaN/AlN量子阱价带子带模型，并给出了不同晶面GaN/AlN量子阱在双轴和单轴应力作用下的子带能量色散关系。根据应力对量子阱价带结构的影响，对应力与空穴有效质量之间的微观物理关系进行了综合研究。结果表明，价带结构对晶体取向的改变有很大的依赖性。双轴应力对有效质量的改善效果不大，然而单轴压缩应力通过降低垂直沟道方向的能量使低有效质量区域获得更多的空穴，从而有效降低空穴有效质量，且在不同晶面的结构中都减少了约90%。

Abstract

In order to deeply understand the physical properties of strained heterojunction quantum well structures and improve the design of wide-bandgap nitride semiconductor devices

in t

his paper

based on the six-band stress-dependent k·p Hamiltonian and the self-consistent Schrodinger-Poisson equation

the valence subband model of wurtzite GaN/AlN quantum well with polar (0001)

semi-polar (

$10\bar 12 $

img text_id='Z-20230525091841' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091841.jpg'>

) and non-polar (

$10\bar 10 $

img text_id='Z-20230525091824' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091824.jpg'>

) orientations under field confinement was established. The subband energy dispersion relations between GaN/AlN quantum well with different crystal orientations under biaxial and uniaxial stresses were also given. According to the influence of stress on the valence band structure of quantum well

the microcosmic physical relationship between stress and hole effective mass was studied comprehensively. The results show that the valence band structure heavily depends on the modification in crystal orientation. The biaxial stress has little effect on the improvement of effective mass. However

uniaxial compressive stress can obtain more holes in the region of low effective mass by reducing the energy in the vertical channel direction

such that the hole effective mass can be effectively reduced. And it is reduced by about 90% in the structure of different crystal orientations.

关键词

Keywords

references

IKEDA N, NIIYAMA Y, KAMABAYASHI H, et al . GaN power transistors on Si substrates for switching [J ] . Proceedings of the IEEE, 2010, 98(7): 1151-1161.

FLACK T J, PUSHPAKARAN B N, BAYNE S B. GaN technology for power electronic applications: a review [J]. Journal of Electronic Materials, 2016, 45(6): 2673-2682.

ZHENG Z Y, ZHANG L, SONG W J, et al . Gallium nitride-based complementary logic integrated circuits [J ] . Nature Electronics, 2021, 4: 595-603.

SIRENKO Y M, JEO N J B, KIM W K, et al . Envelope-function formalism for valence bands in wurtzite quantum wells [J ] . Physical Review B, 1996, 53(4): 1997-2009.

CHUANG S L, CHAO C S. Effective mass Hamiltonian for strained wurtzite GaN and analytical solutions [J]. Applied Physicas Letters, 1996, 68(12): 1657-1659.

FRITSCH D, SCHMIDT H, GRUNDMANN M. Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN [J]. Physical Review B, 2003, 67(23): 235205.

AMBACHER O, SMART J, SHEALY J R, et al . Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J ] . Journal of Applied Physics, 1999, 85(6): 3222-3233.

NOMOTO K, CHAUDHURI R, BADER S J, et al . GaN/AlN p-channel HEFTs with I mas 420 mA/mm and ~20 GHz f T / f MAX [C ] //2020 IEEE International Electron Devices Meeting (IEDM) . San Francisco, CA, USA: IEEE, 2020.

聂玉虎. GaN材料应变沿表面法线分布信息的XRD测量方法研究[D]. 西安: 西安电子科技大学, 2014.

SONG H, SUH J, KIM E K, et al . Growth of high quality a -plane GaN epi-layer on r -plane sapphire substrates with optimization of multi-buffer layer [J ] . Journal of Crystal Growth, 2010, 312(21): 3122-3126.

JUNG C, JANG J, HWANG J, et al . Defect reduction in (11-22) semipolar GaN with embedded InN islands on m -plane sapphire [J ] . Journal of Crystal Growth, 2013, 370(5): 26-29.

PONCE S, JENA D, GIUSTINO F. Route to high hole mobility in GaN via reversal of crystal-field splitting [J]. Physical Review Letters, 2019, 123(9): 096602.

GUPTA C, TSUKADA Y, ROMANCZYK B, et al . First demonstration of improvement in hole conductivity in c -plane III-nitrides through application of uniaxial strain [J ] . Japanese Journal of Applied Physics, 2019, 58(3): 030908.

BADER S J, CHAUDHURI R, SCHUBERT M, et al . Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas [J ] . Applied Physics Letters, 2019, 114(25): 253501.

CHUANG S L, CHANG C S. K·P method for strained wurtzite semiconductors [J]. Physical Review B, 1996, 54(4): 2491-2504.

KANE E O. Band structure of indium antimonide [J]. Journal of Physics and Chemistry of Solids, 1957, 1(4): 249-261.

BYKHOVSKI A, GELMONT B L, SHUR M S. Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientation [J]. Applied Physics Letters, 1993, 63(16): 2243-2245.

CALIN G. K·P theory of semiconductor nanostructures[D]. Worcester: Worcester Polytechnic Institute, 2005.

BYKHOVSKI A, GELMONT B, SHUR M S, et al . Current-voltage characteristics of strained piezoelectric structures [J ] . Journal of Applied Physics, 1995, 77(4): 1616-1620.

CHAUDHURI R, BADER S J, CHEN Z, et al . A polarization-induced 2D hole gas in undoped gallium nitride quantum wells [J ] . Science, 2019, 365(6460): 1454-1457.

SMITH D L, MAILHIOT C. Piezoelectric effects in strained-layer superlattices [J]. Journal of Applied Physics, 1988, 63(8): 2717-2719.

BASTARD G, MENDEZ E E, CHANG L L, et al . Variational calculations on a quantum well in an electric field [J ] . Physical Review B, 1983, 28(6): 3241-3245.

LIU Y, LI X, ZHANG G, et al . The calculation for quantized valence subband structure of zinc-blende GaN heterojunction quantum well based on k·p method [J ] . Semiconductor Science and Technology, 2021, 36(12): 1-9.

BREY L, DEMPSEY J, JOHNSON N F, et al . Infrared optical absorption in imperfect parabolic quantum wells [J ] . Physical Review B, 1990, 42(2): 1240-1247.

VURGAFTMAN I, MEYER J R, RAM-MOHAN L R. Band parameters for III-V compound semiconductors and their alloys [J]. Journal of Applied Physics, 2001, 89(11): 5815-5875.

BYKHOVSKI A D, KAMINSKI V V, SHUR M S, et al . Piezoresistive effect in wurtzite n-type GaN [J ] . Applied Physics Letters, 1996, 68(6): 818-819.

SUZUKI M, UENOYAMA T, YANASE A. First-principles calculations of effective-mass parameters of AlN and GaN [J]. Physical Review B Condens Matter, 1995, 52(11): 8132-8139.

WEBER O, IRISAWA T, NUMATA T, et al . Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs[C ] //IE EE International Electron Devices Meeting. Washington, DC: IEEE, 2007.

ADACHI S. Properties of group-IV, III-V and II-VI semiconductors[M]. New York: John Wiley Sons Inc. , 2005: 114-115.

SIRENKO Y M, JEON J B, KIM K W, et al . Strain effects on valence band structure in würtzite GaN quantum wells [J ] . Applied Physics Letters, 1996, 69(17): 2504-2506.

PARK S H. Many-body optical gain of ( $$10 \bar{1}0 $$ ) wurtzite GaN/AlGaN quantum-well lasers [J ] . Applied Physics Letters, 2000, 77(25): 4095-4097.

NIWA A, OHTOSHI T, KURODA T. Valence subband structures of ( $$10 \bar{1} 0$$ ) -GaN/AlGaN strained quantum wells calculated by the tight-binding method [J ] . Applied Physics Letters, 1997, 70(16): 2159-2161.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

步行能量采集器中磁致伸缩材料的机–磁耦合特性研究

起重机械用绳排索具力学与疲劳特性研究

储能变流器电能质量治理策略研究

基于路况参数的混合动力机车能量管理策略研究

SCA-YOLO: 基于可变形卷积与上下文感知注意力的实时目标检测