CZTSSe薄膜与Mo背电极接触特性的数值分析

庄楚楠; 许佳雄; 林俊辉

doi:10.12052/gdutxb.190104

欢迎来到能源电力期刊网！

English Version 期刊登录

您当前的位置：

首页 >

文章列表页 >

CZTSSe薄膜与Mo背电极接触特性的数值分析

更新时间：2026-05-27

- CZTSSe薄膜与Mo背电极接触特性的数值分析
- Numerical Analysis of Contact Characteristics between CZTSSe Thin Film and Mo Back Electrode
- 广东工业大学学报 2020年37卷第3期页码：106-113
- 作者机构：
  
  广东工业大学材料与能源学院,广东,广州,510006
- 作者简介：
  
  庄楚楠(1995–)，男，硕士研究生，主要研究方向为半导体光电材料及器件
  许佳雄(1984–)，男，副教授，博士，研究生导师，主要研究方向为半导体光电材料及器件，E-mail：xujiaxiong@dut.edu.cn
- 基金信息：
  
  国家自然科学基金资助项目(61504029);广东省科技计划项目(2017A010104017)
- DOI：10.12052/gdutxb.190104
  中图分类号： TN36
- 网络首发：2020-05-12，
  
  纸质出版：2020
- 稿件说明：
移动端阅览
庄楚楠, 许佳雄, 林俊辉. CZTSSe薄膜与Mo背电极接触特性的数值分析[J]. 广东工业大学学报, 2020, 37(3): 106-113.

Zhuang Chu-nan, Xu Jia-xiong, Lin Jun-hui. Numerical Analysis of Contact Characteristics between CZTSSe Thin Film and Mo Back Electrode[J]. 2020, 37(3): 106-113.
庄楚楠, 许佳雄, 林俊辉. CZTSSe薄膜与Mo背电极接触特性的数值分析[J]. 广东工业大学学报, 2020, 37(3): 106-113. DOI： 10.12052/gdutxb.190104.

Zhuang Chu-nan, Xu Jia-xiong, Lin Jun-hui. Numerical Analysis of Contact Characteristics between CZTSSe Thin Film and Mo Back Electrode[J]. 2020, 37(3): 106-113. DOI： 10.12052/gdutxb.190104.

摘要

为分析CZTSSe薄膜太阳能电池的背电极接触特性

采用AFORS-HET(Automat for Simulation of HETerostructures) v2.5软件对CZTSSe/Mo(S

Se)

/Mo结构进行数值分析

研究CZTSSe的带隙和电子亲和能、Mo(S

Se)

界面层的厚度以及带隙对CZTSSe与Mo电极的电学接触特性的影响。结果表明CZTSSe的带隙和电子亲和能的增大

使得CZTSSe/Mo(S

Se)

/Mo的欧姆接触减弱并向整流接触转变; 对于带隙较窄的CZTSSe

加入界面层使CZTSSe/Mo(S

Se)

/Mo形成的欧姆接触转变为整流接触

随着界面层厚度的增大

整流接触逐渐减弱; 对于带隙较宽的CZTSSe

加入2 nm的界面层使得CZTSSe/Mo(S

Se)

/Mo形成的整流接触增强

但随着界面层厚度的继续增大

整流接触减弱。当CZTSSe的带隙和电子亲和能较小时

CZTSSe/Mo(S

Se)

/Mo形成欧姆接触

控制界面层厚度为100 nm左右可以得到最优的电学接触特性。

Abstract

In order to analyze the back electrode contact characteristics of CZTSSe thin film solar cells

the CZTSSe/Mo(S

Se)

/Mo structure was simulated by AFORS-HET v2.5 software. The effects of the band gap

and the electron affinity of CZTSSe and the thickness and the band gap of Mo(S

Se)

interface layer on the electrical contact characteristics between CZTSSe and Mo electrodes were investigated. The results show that the increases of the band gap and electron affinity of CZTSSe make the ohmic contact of CZTSSe/Mo(S

)

/Mo weaken and transform to the rectifying contact. For CZTSSe with a narrow band gap

the addition of the interface layer causes the ohmic contact formed by CZTSSe/Mo(S

Se)

/Mo to be converted into a rectifying contact. As the thickness of the interface layer increases

the rectifying contact weakens. For CZTSSe with a wide band gap

the addition of a 2 nm interface layer enhances the rectifying contact formed by CZTSSe/Mo(S

Se)

/Mo. As the thickness of the interface layer increases

the rectifying contact weakens. When the work function of CZTSSe is low

CZTSSe/Mo(S

Se)

/Mo forms an ohmic contact

and the optimal electrical contact characteristics can be obtained by controlling the thickness of the interface layer to about 100 nm.

关键词

Keywords

references

TUAN D A, KE N H, LOAN P T K, et al . A method to improve crystal quality of CZTSSe absorber layer [J ] . Journal of Sol-Gel Science and Technology, 2018, 87: 245-253.

陈红丽. 铜锌锡硫硒薄膜的硒化工艺及其光学性能研究[D]. 开封: 河南大学, 2015: 1-10.

WANG W, WINKLER M T, GUNAWAN O, et al . Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency [J ] . Advanced Energy Materials, 2014, 4(7): 1-5.

SCRAGG J J, WATJEN J T, EDOFF M, et al . A detrimental reaction at the molybdenum back contact in Cu 2 ZnSn(S,Se) 4 thin-film solar cells [J ] . Journal of the American Chemical Society, 2012, 134(47): 19330-19333.

SHIN B, BOJARCZUK N A, GUHA S. On the kinetics of MoSe 2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact [J ] . Applied Physics Letters, 2013, 102(091907): 1-4.

GOUTAM K D, SIARHEI Z, SAEID M P, et al . Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells [J ] . Scientific Reports, 2017, 7: 1350-1361.

COZZA D, RUIZ C M, DUCHE D, et al . Modeling the back contact of Cu 2 ZnSnSe 4 solar cells [J ] . IEEE Journal of Photovoltaics, 2016, 6(5): 1292-1297.

GHOSH R K, MAHAPATRA S. Monolayer transition metal dichalcogenide channel-based tunnel transistor [J]. IEEE Journal of the Electron Devices Society, 2013, 1(10): 175-180.

MINBASHI M, OMRANI M K, MEMARIAN N, et al . Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell [J ] . Current Applied Physics, 2017, 17: 1238-1243.

YIM C, O’BRIEN M, JAMES G, et al . Investigation of the optical properties of MoS 2 thin films using spectroscopic ellipsometry [J ] . Applied Physics Letters, 2014, 104(103114): 1-5.

TONGAY S, ZHOU J, ATACA C, et al . Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus MoS 2 [J ] . Nano Letters, 2012, 12(11): 5576-5580.

SIMYA O K, MAHABOOBBATCHA A, Balachande R K. A comparative study on the performance of kesterite based thin film solar cells using SCAPS simulation program [J]. Superlattices and Microstructures, 2015, 82: 248-261.

XU J X, YAO R H. Analysis of Photovoltaic characteristics of n-ZnO: Al/i-ZnO/n-CdS/p-Cu 2 ZnSnS 4 solar cells [J ] . Acta Physica Sinica, 2012, 61(18): 451-458.

ZHANG H, CHENG S Y, ZHOU H F, et al . Numerical simulation of Cu 2 ZnSnS 4 /Zn(O,S) heterojunction thin film solar cells [J ] . Journal of Fuzhou University (Natural Science Edition), 2017, 45(3): 342-347.

刘恩科, 朱秉升, 罗晋生, 等. 半导体物理学[M]. 北京: 国防工业出版社, 2013: 196-198.

HIRONIWA D, MURATA M, ASHIDA N, et al . Simulation of optimum band-gap grading profile of Cu 2 ZnSn(S,Se) 4 solar cells with different optical and defect properties [J ] . Japanese Journal of Applied Physics, 2014, 53: 1-9.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

具守恒量波动方程的循环双子网物理信息神经网络

基于PSI技术的福州市地面形变监测与影响因素分析

面向灾后救援的多无人机通感算一体化资源分配优化方法

融合沟道倾斜角的3D NAND存储单元建模及编程策略优化

双模态迭代交叉注意力融合集成框架