Comparative Study of Semiconductor Power Losses Between CSI-Based STATCOM and VSI-Based STATCOM, Both used for Unbalance Compensation

Anas Benslimane; Jamal Bouchnaif; Mohammed Essoufi; Bekkay Hajji; Loukmane el Ldrissi

doi:10.1186/s41601-019-0150-4

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Comparative Study of Semiconductor Power Losses Between CSI-Based STATCOM and VSI-Based STATCOM, Both used for Unbalance Compensation

Original Research | 更新时间：2026-09-30

- Comparative Study of Semiconductor Power Losses Between CSI-Based STATCOM and VSI-Based STATCOM, Both used for Unbalance Compensation
- Comparative study of semiconductorpower losses between CSI-based STATCOMand VSI-based STATCOM, both used forunbalance compensation
- 现代电力系统保护与控制（英文） 2020年5卷第1期页码：1-14
- 作者机构：
  
  1. Laboratory Renewable energy, embedded system and information processing, National School of Applied Sciences, University of Mohammed I,Oujda,Morocco
  2. Laboratory of Electrical Engineering and Maintenance, Higher School of Technology, University of Mohammed I,Oujda,Morocco
- 作者简介：
- 基金信息：
- DOI：10.1186/s41601-019-0150-4
  中图分类号：
- 纸质出版：2020-01-01
- 稿件说明：
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Anas Benslimane, Jamal Bouchnaif, Mohammed Essoufi, 等. Comparative Study of Semiconductor Power Losses Between CSI-Based STATCOM and VSI-Based STATCOM, Both used for Unbalance Compensation[J]. 现代电力系统保护与控制（英文）, 2020,5(1):1-14.

Anas Benslimane, Jamal Bouchnaif, Mohammed Essoufi, et al. Comparative study of semiconductorpower losses between CSI-based STATCOMand VSI-based STATCOM, both used forunbalance compensation[J]. Protection and Control of Modern Power Systems, 2020, 5(1): 1-14.
Anas Benslimane, Jamal Bouchnaif, Mohammed Essoufi, 等. Comparative Study of Semiconductor Power Losses Between CSI-Based STATCOM and VSI-Based STATCOM, Both used for Unbalance Compensation[J]. 现代电力系统保护与控制（英文）, 2020,5(1):1-14. DOI： 10.1186/s41601-019-0150-4.

Anas Benslimane, Jamal Bouchnaif, Mohammed Essoufi, et al. Comparative study of semiconductorpower losses between CSI-based STATCOMand VSI-based STATCOM, both used forunbalance compensation[J]. Protection and Control of Modern Power Systems, 2020, 5(1): 1-14. DOI： 10.1186/s41601-019-0150-4.

摘要

In this paper

we present a detailed procedure to determine the semiconductor losses for both structures of a shunt STATCOM (Static Compensator)

STATCOM based on Current Source Inverter (CSI) and STATCOM based on Voltage Source Inverter (VSI)

both used for voltage unbalance compensation. As a first step

we study the VSI-based STATCOM and the CSI-based STATCOM used in high speed railway substations. Then we analyze the design and the sizing of the unbalance compensator in order to obtain an unbalance factor that does not exceed the limits imposed by the standards or by the energy provider. Following that

we compare the performances obtained with both structures VSI-STATCOM and CSI-STATCOM

after calculating the semiconductor power losses in the STATCOM converters. Finally

we validate our approach by simulation over real data of unbalance compensation caused by the new high-speed railway in Morocco. We use the tools MATLAB / Simulink/Simpowersys for performing our simulations.

Abstract

In this paper

we present a detailed procedure to determine the semiconductor losses for both structures of a shunt STATCOM (Static Compensator)

STATCOM based on Current Source Inverter (CSI) and STATCOM based on Voltage Source Inverter (VSI)

both used for voltage unbalance compensation. As a first step

we compare the performances obtained with both structures VSI-STATCOM and CSI-STATCOM

after calculating the semiconductor power losses in the STATCOM converters. Finally

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