[Objective] Power devices composed of first- and second-generation semiconductor materials have reached their performance limits

making them unsuitable for more complex circuit topologies. Silicon carbide (SiC)

the third-generation semiconductor material

has gradually become a research focus

and corresponding SiC devices are now at the forefront of research. Compared to traditional silicon (Si)-based devices

silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) offer superior characteristics and are widely used in high-voltage

high-frequency

and high-power-density applications. However

due to the limited current-carrying capacity of a single device

multiple devices are often used in parallel. Immature manufacturing processes and asymmetric circuit layouts cause differences in device parameters and external circuit parameters

leading to unbalanced current issues. To address this problem

this paper proposes a current-sharing control strategy. [Methods] This paper first analyzed and summarized the factors affecting parallel current sharing and determined the influence of each parameter. Based on the devices’ switching characteristics

theoretical formulas were derived to summarize the current variation patterns. Then

a corresponding current detection circuit was designed to accurately capture current differences. Finally

a current-sharing control strategy based on adjusting multi-level driving resistance was proposed to gradually regulate unbalanced currents. [Results] Simulation results validated the effectiveness of the proposed control strategy

significantly reducing current imbalance. [Conclusion] The results show that by setting an appropriate driving resistance

the proposed control strategy can effectively achieve current sharing in dual-device parallel configurations.