We put forward a high voltage IGBT module transient model after considering thermal properties to describe the relationship and the transient and thermal properties of IGBT and diode in the technical field of flexible high voltage direct current transmission technology. The model includes a switching transient model of IGBT module and thermal properties of module. Based on the mechanism of derivation and electrical equivalent

there is no necessary to extract the underlying parameters of the device and solve complex semiconductor equations

greatly reducing the amount of calculation. The proposed model is implemented on the PSCAD/EMTDC platform and the general IGBT model in SABER

respectively

and the test results are used to verify the effectiveness of the model. The results show that the proposed model can not only achieve the different states of IGBT module in circuit simulation

but also simulate the voltage and current spikes

tail current

Miller platform and consider the thermal loss influence in device parameters. Therefore

the model can be applied in the simulation of the flexible HVDC transmission system and as a basis for studying the electromagnetic interference and loss analysis and control strategy.