HAI Bin, ZHANG Cheng, WANG Ruixue, et al. Plasma Depositing SiO2-like Film to Suppress Surface Charge Accumulation on Epoxy Resin[J]. 2017, 43(2): 375-384.
HAI Bin, ZHANG Cheng, WANG Ruixue, et al. Plasma Depositing SiO2-like Film to Suppress Surface Charge Accumulation on Epoxy Resin[J]. 2017, 43(2): 375-384.DOI:
as an insulating material in gas insulated devices
tends to accumulate surface charge under high DC voltage
resulting in surface flashover. In order to suppress the surface charge accumulation on epoxy resin
non-thermal plasmas generated by gliding arc discharge driven by high-frequency high-voltage power supply are used to deposit SiO
2
-like film on the surface of epoxy resin. The reaction precursor is tetraethyl orthosilicate(TEOS). The properties of the sample before and after deposition are analyzed with Fourier transformed infrared(FTIR)
megger
and the surface potential measurement system. The test results show that the SiO
2
-like film consisting of Si—O—Si and Si—OH groups is deposited on epoxy resin
when the treatment time exceeds 5 s and its thickness can reach 219 nm. After the deposition
the water contact angle will decrease significantly
the surface and volume conductivity will increase by two orders of magnitude
and the relative permittivity will decrease significantly. According to the three-dimensional distribution of surface potential
the initial accumulation of surface charge on epoxy resin can be suppressed and the process of dissipation is accelerated after the deposition
because the SiO
2
-like film depositing on epoxy resin will reduce the depth of charge traps in the surface layer and suppressed the accumulation of surface charge.