With the advantages of small size

high power density and low cost

the reverse-conducting IGBT（RC-IGBT） has attracted wide attention and research interest. We review the development of RC-IGBT technology

and focus on high-voltage devices which is suitable for power grid applications. The content includes the primitive structure and operating principle

snapback problem solving

back-side doping optimization

and diode performance optimization. On the basis of the pilot IGBT structure

we further discuss the power optimization

turn-off softness

short circuit robustness

diode surge current

temperature characteristics

and other potential performance advantages of RC-IGBTs. A series of technological advances are expected to enable us to take full advantage of its performance in a wide range of applications including power grid applications.