As core device of power electronics equipment

insulated gate bipolar transistor（IGBT） is widely used in various applications

such as rail traction and high voltage direct current transmission. This not only gives more stringent challenge to the performance of high-power IGBT modules

but also puts forward higher requirements for the driving circuit of IGBT. Consequently

firstly

the latest technology and development trend of high-power IGBT is introduced in detail. Then

IGBT driver circuits and series-parallel technology are classified according to the control method. The operating principles

advantages and disadvantages of each type are analyzed and discussed in detail. Finally

outlook on subjects of future research is given.