The high-voltage high-power press pack IGBT generates a high-frequency plasma extraction transit time（PETT） oscillation during the turn-off tail phase

causing severe electromagnetic interference to the driving circuit and the environment

thus it is critical to suppress the PETT oscillation when developing high-power press pack IGBT. In this paper

based on the space charge effect caused by the hole injection in the IGBT turn-off tail phase

the large signal characteristics of the space charge region and the mechanism of PETT oscillation were analyzed. Secondly

a test platform for the switching characteristics of the press pack IGBT device is built. The effects of the single-chip PETT oscillation characteristics and the driving loop parameters on the PETT oscillation and the electromagnetic interference characteristics of the PETT oscillation are studied for the first time. Finally

the PETT oscillation suppression method of the press pack IGBT device is analyzed

and a method for reducing the complexity of the packaging process and reducing the electrical stress of the chip was proposed

which is very suitable for high-power press pack IGBTs.