GU Miaosong, CUI Xiang. Influence of Turn-off Currents on Plasma Extraction Transit Time Oscillations in High-voltage IGBTs[J]. 2020, 46(4): 1291-1301.
GU Miaosong, CUI Xiang. Influence of Turn-off Currents on Plasma Extraction Transit Time Oscillations in High-voltage IGBTs[J]. 2020, 46(4): 1291-1301.DOI:
Plasma extraction transit time(PETT) oscillations are a type of self-excited oscillations found in high-voltage bipolar devices and of important potential application value in the state monitoring of power semiconductor modules. Consequently
we investigated the oscillation waveform parameters that are significantly coupled to turn-off currents and analyzed the physical mechanism. A PETT oscillation test platform for high-voltage press-pack IGBT chips was designed and fabricated
and PETT oscillations between two IGBT chips were detected under different turn-off currents. The relationship between the turn-off current and a series of typical oscillation waveform parameters was presented. To explain the experimental rules
we proposed a new equivalent circuit of PETT oscillations and an intuitive graphical analysis method. From the experimental results
it is found that there are apparent monotonic coupling relationships between the turn-off current and the start time
peak time or end time of oscillations with the growth rate of about 0.1 μs/A
which can be adequately explained by the graphical analysis method. Furthermore
it is deduced that there is a linear relationship between the logarithmic value of the turn-off current and the start time
peak time or end time of oscillations
and the inference is confirmed by the experimental results.