Surge disturbance can be generated by high power electromagnetic pulse coupling on the cable of electronic information equipment. Transient voltage suppressor（TVS） is an important protective device to suppress surge disturbance. Most of the existing TVS devices are Si-based materials

and the response speed and flow capacity are limited by the material characteristics. SiC material is chosen to design new TVS devices in this paper. The structure of new device is NPN

and the basic parameters are determined by dynamic response simulation

then the failure reason of the device under high power electromagnetic pulse is studied. The batch of devices were fabricated by the deep etching groove technology

and Si-TVS with similar junction area and operating voltage were selected for comparative tests. The test results show that the response speed of SiC-TVS under fast front pulse is significantly superior to that of Si-TVS

and the flow capacity of SiC-TVS is six times as much as that of Si-TVS under 10/1 000 μs surge pulse injection.