In order to clarify the process

mechanism and influencing factors of arc current transfer and to determine the difference of arc current transfer among the semiconductor devices

the experimental study was carried out based on the hybrid electromechanical on-load tap changer test platform. Based on the theoretical analysis of the key parameters affecting the arc current transfer rate

the rapid control prototype circuits in the presence and absence of shunt mechanism were established respectively

and the arc current transfer parameters under the fixed on-off phase were obtained. The characteristic parameters of thyristor

metal-oxide semiconductor field effect transistor and insulated gate bipolar transistor were obtained through the power device test circuit

and the arc current transfer conditions and working mechanism were determined. By summarizing the key parameters of three kinds of power devices

the differences of the arc current transfer and the turn-on process in different semiconductor devices were summarized. The research results show that the metal oxide semiconductor field effect transistor（MOSFET） parallel branch can realize the optimal parameter of arc current transfer

the energy of switching arc is on the scale of magnitude of 10-3 joules

which is about 6.4% and 9.3% of the corresponding parameters of insulated gate bipolar transistor（IGBT） and silicon controlled rectifier（SCR）

respectively

and the arc current transfer time is less than 50 μs

which is about 85.3% and 61.1% of IGBT and SCR. This work can provide reference for the subsequent research on the electromechanical hybrid on-load tap switch prototype based on full-control devices.