HE Shun, ZHENG Yigu, LIN Chuanjie, et al. Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators[J]. 2020, 46(11): 4006-4013.
HE Shun, ZHENG Yigu, LIN Chuanjie, et al. Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators[J]. 2020, 46(11): 4006-4013.DOI:
is often utilized to make cone-type or pillar insulators in gas insulated switchgear(GIS)
which operate stable under common AC voltage. However
due to the operation of disconnecting switch operation in GIS
very fast transient over-voltage(VFTO)-induced flashover along the insulator surface seriously threatens the stability of GIS. It is necessary to study this phenomenon in depth. In this paper
the influence of Al
2
O
3
doping content on gas-solid interface characteristics of epoxy resin was investigated by various test methods
and the effect of Al
2
O
3
doping content on VFTO resistance of insulators was studied by simulation. The e
xperimental results show that
as the Al
2
O
3
doping content increases
the surface particle density
the percentage of Al atoms on the surface
the steady photon number of electroluminescence
surface conductivity
bulk conductivity
dielectric constant
tangent of loss angle and partial discharge of epoxy insulating materials will increase
whereas
the water contact angle and the AC flashover voltage will decrease. The experimental results and simulation results show that reducing the doping content of Al
2
O
3
is effective to improving the VFTO tolerance of epoxy resin insulators.