The existing power semiconductor device model based on ambipolar diffusion equation（ADE） can only describe the carrier distribution of quasi-neutral region precisely

leading to a limited accuracy when it is applied to modeling of high-voltage power device. In this study

a drift-diffusion model（DDM） based modeling approach with improved accuracy is proposed and applied to the integrated gate commutated thyristor（IGCT） circuit model.By characterizing the IGCT

the analyses reveal that there are the different orders of solving variables

and the characteristic parameters determined by high doping concentrations are the main factors.Moreover

the model stability and execution speed are improved by analytically modeling the highly doped region

by simplifying the boundary conditions of base region calculation

and by using a moving mesh method to solve the DDM equations. Finally

the simulation and experimental results of double-pulse test of IGCT show that

with high simulation speed comparable with ADE-based model

the proposed circuit model is superior to the existing models in its characteristic modeling at turn-off oscillation and punch-through stages.