To accurately access the influences of the parasitic parameters of the commutation path on the switching characteristics of the silicon carbide MOSFET

a complete model of silicon carbide MOSFET switching transient circuit in which the parasitic parameters of the commutation path are taken into consideration is established.In the model

the parasitic capacitance of load inductance of the commutation path is taken into consideration

and the parasitic inductance of the commutation path is divided into the diode branch inductance and the other series inductance. Based on the new model

the switching characteristics of the device are analyzed. Then a test platform for the silicon carbide MOSFET device dynamic characteristic is built

and the corresponding equivalent circuit calculation model is extracted. Through the combination of analytical analysis and calculation model

the influences of the parasitic parameters of each part of the commutation path on the silicon carbide MOSFET switching characteristics are analyzed. Finally

the correctness of the analysis results is verified by experiments. The results show that when the parasitic capacitance of the load inductor is taken into account

the diode branch inductance and other series inductances in the commutation path have different effects on the switching characteristics of the silicon carbide MOSFET

and the effect of the inductance of diode branch on turn off voltage overshoot is more remarkable. Based on this

the layout optimization and parasitic parameter design of the high voltage silicon carbide MOSFET dynamic characteristic test platform are proposed for the problems of voltage overshoot and insulation breakdown.