Modular multilevel converter（MMC） based voltage-sourced-converter high-voltage-direct-current（VSCHVDC） technology has been widely utilized in power transmission field. Deterioration mechanism analysis and condition monitoring technology of high voltage IGBT is of significance to maintain the reliability of MMC. The current packaging technologies of high voltage IGBT contain bond-wire and press-pack. The review on the failure mechanism of bond-wire IGBT is sufficient compared to press-pack IGBT（PPI）. Therefore

in this paper

the condition deterioration modes and mechanism of PPI are summarized firstly. Secondly

the domestic and foreign research status of condition monitoring methods of high voltage IGBT is summarized based on electrical

thermal and insulation parameters in recent years

especially for high voltage PPI. Finally

according to the problem of state-of-the-art

the development trend and prospective research interests in the area of condition monitoring method of high voltage IGBT used in MMC are proposed. This paper is meaningful for the condition monitoring of high voltage IGBT used in MMC.