刘国友, 罗海辉, 李诚瞻, 宋瓘. 3 300V SiC SBD嵌入式MOSFET研制[J]. 中国电力, 2021, 54(12): 81-85, 93. DOI: 10.11930/j.issn.1004-9649.202107055
引用本文: 刘国友, 罗海辉, 李诚瞻, 宋瓘. 3 300V SiC SBD嵌入式MOSFET研制[J]. 中国电力, 2021, 54(12): 81-85, 93. DOI: 10.11930/j.issn.1004-9649.202107055
LIU Guoyou, LUO Haihui, LI Chenzhan, Song Guan. R&D of 3 300V SiC MOSFET With Embedded SBD[J]. Electric Power, 2021, 54(12): 81-85, 93. DOI: 10.11930/j.issn.1004-9649.202107055
Citation: LIU Guoyou, LUO Haihui, LI Chenzhan, Song Guan. R&D of 3 300V SiC MOSFET With Embedded SBD[J]. Electric Power, 2021, 54(12): 81-85, 93. DOI: 10.11930/j.issn.1004-9649.202107055

3 300V SiC SBD嵌入式MOSFET研制

R&D of 3 300V SiC MOSFET With Embedded SBD

  • 摘要: 研制了一种3 300 V 碳化硅(silicon carbide, SiC) 肖特基二极管(schottky barrier diodes,SBD)嵌入式金属-氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistors,MOSFET),即在传统MOSFET结构中集成一个由钛形成的肖特基接触。在芯片制造过程中,通过增加Ni退火后的表面处理工艺,使得栅源短路失效率降低约58%。研究发现,当二极管电流密度JSD=100 A/cm2时,嵌入式二极管电压降VSD(SBD)=2.1 V,寄生二极管的开启电压约为8 V,这说明嵌入式SBD可以抑制MOSFET寄生二极管开启,降低碳化硅MOSFET“双极退化”风险。另外,该芯片的阈值电压为3.05 V,比导通电阻和阻断电压分别为18.9 mΩ·cm2和3 955 V,在高压轨交市场具有广阔的应用前景。

     

    Abstract: In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky contact. The optimized surface treatment procedure after nickel annealing is adopted to improve the leakage performance of gate-source in the chip manufacturing process, which contributes to a 58% reduction in gate-source short circuit failure rate. It is found that the switch-on voltage of parasitic diode is about 8V, when the diode current density (JSD) reaches 100 A/cm2 , the voltage drop of SBD (VSD(SBD)) is 2.1V, which indicates the effectiveness of the embedded SBD in suppressing the parasitic diode turn-on and reducing the bipolar degradation risk of MOSFET. In addition, the threshold voltage of the chip is 3.05V, and the specific on-resistance and blocking voltage are 18mΩ·cm2 and 3 955V respectively, suggesting a broad application prospect in the high-voltage rail transit market.

     

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