Abstract: In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky contact. The optimized surface treatment procedure after nickel annealing is adopted to improve the leakage performance of gate-source in the chip manufacturing process, which contributes to a 58% reduction in gate-source short circuit failure rate. It is found that the switch-on voltage of parasitic diode is about 8V, when the diode current density (J_SD) reaches 100 A/cm² , the voltage drop of SBD (V_SD(SBD)) is 2.1V, which indicates the effectiveness of the embedded SBD in suppressing the parasitic diode turn-on and reducing the bipolar degradation risk of MOSFET. In addition, the threshold voltage of the chip is 3.05V, and the specific on-resistance and blocking voltage are 18mΩ·cm² and 3 955V respectively, suggesting a broad application prospect in the high-voltage rail transit market.