刘国友, 窦泽春, 罗海辉, 覃荣震, 王彦刚. 压接型IGBT均流设计[J]. 中国电力, 2019, 52(9): 20-29. DOI: 10.11930/j.issn.1004-9649.201907122
引用本文: 刘国友, 窦泽春, 罗海辉, 覃荣震, 王彦刚. 压接型IGBT均流设计[J]. 中国电力, 2019, 52(9): 20-29. DOI: 10.11930/j.issn.1004-9649.201907122
Guoyou LIU, Zechun DOU, Haihui LUO, Rongzhen QIN, Yangang WANG. Current-sharing Design of Press-Pack IGBT[J]. Electric Power, 2019, 52(9): 20-29. DOI: 10.11930/j.issn.1004-9649.201907122
Citation: Guoyou LIU, Zechun DOU, Haihui LUO, Rongzhen QIN, Yangang WANG. Current-sharing Design of Press-Pack IGBT[J]. Electric Power, 2019, 52(9): 20-29. DOI: 10.11930/j.issn.1004-9649.201907122

压接型IGBT均流设计

Current-sharing Design of Press-Pack IGBT

  • 摘要: 针对压接型绝缘栅双极晶体管(IGBT)内部均流设计,对多芯片压接结构及其压力均衡、压接型IGBT芯片内部均流、子单元间均流等方面进行了研究和优化设计。试验验证了压接型IGBT具有良好的电流关断能力、短路电流能力及反偏安全工作区,器件内部均流状态较好。

     

    Abstract: Aiming at the inner design of the press-pack IGBT devices, this paper focuses on the study and optimal design of these issues, such as multi-chip pressure contact and its pressure balancing, internal current-sharing and current balancing among sub-units. Testing results showed that the developed press-pack IGBT devices has promising capabilities of current turn-off, short-circuit current and RBSOA, which indicates their good ability of inner current sharing.

     

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