罗毅飞, 王磊, 黄永乐, 刘宾礼. 焊接型电力电子器件失效机理及量化评估方法[J]. 中国电力, 2019, 52(9): 38-47. DOI: 10.11930/j.issn.1004-9649.201907059
引用本文: 罗毅飞, 王磊, 黄永乐, 刘宾礼. 焊接型电力电子器件失效机理及量化评估方法[J]. 中国电力, 2019, 52(9): 38-47. DOI: 10.11930/j.issn.1004-9649.201907059
Yifei LUO, Lei WANG, Yongle HUANG, Binli LIU. Failure Mechanisms and Evaluation Methods of Power Electronic Devices[J]. Electric Power, 2019, 52(9): 38-47. DOI: 10.11930/j.issn.1004-9649.201907059
Citation: Yifei LUO, Lei WANG, Yongle HUANG, Binli LIU. Failure Mechanisms and Evaluation Methods of Power Electronic Devices[J]. Electric Power, 2019, 52(9): 38-47. DOI: 10.11930/j.issn.1004-9649.201907059

焊接型电力电子器件失效机理及量化评估方法

Failure Mechanisms and Evaluation Methods of Power Electronic Devices

  • 摘要: 电力电子器件作为现代大功率电能变换装置的核心部件,随着功率等级提升,对其可靠性要求也越来越高,尤其是针对装置的功率体积密度有较高要求的应用场合,仍然缺乏有效的失效量化评估方法,传统的粗犷式设计已经无法满足要求。因此,为了提高装置的功率体积密度和可靠性,需要对器件的工作机理和可靠性边界进行准确表征。针对焊接型电力电子器件,首先从器件的失效机理入手,总结归纳了目前焊接型电力电子器件失效研究现状;然后从器件失效的内部和外部因素两方面分析了电力电子器件的失效机理;最后,从过压失效、过流失效以及疲劳失效三方面,提出了器件的失效量化评估方法,尤其是基于器件物理模型的评估方法,并以二极管和绝缘栅双极晶体管(IGBT)为例进行了验证。为实现电力电子器件的尽限应用提供了支撑。

     

    Abstract: Power electronic devices are the core components of modern high power converters. With the increase of the power levels, the requirements of the reliability become more and more critical. There are still lack of efficient evaluation methods of reliability, especially for the applications which require high power and volume density. The traditional design methods can no longer satisfy the requirements. Therefore, in order to improve the power and volume density of the devices, the accurate characterizations of the working mechanism and reliability margin are of great need. Firstly, this paper analyzed the failure mechanisms of the devices and concluded the current research situations of power electronic devices combing the research results of the authors’ project groups. Then, the failure mechanisms of power devices are analyzed from perspectives of outer and inner affects. Finally, from the perspective of overvoltage, overcurrent and fatigue failure, quantitative evaluation methods are proposed to evaluate the device failures, especially focusing on the physical methods, and verified the effectiveness by taking diodes and insulated gate bipolar transistors as examples. This paper gives supports to the extreme applications of power electronic devices.

     

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