Abstract: The power semiconductor module is more and more widely used in human transportation field, like electric vehicle and high-speed train. These applications in which the personnel safety is seriously concerned usually require power modules with higher reliability. In this paper, the typical automotive and industrial grade insulated gate bipolar transistors (IGBT) were selected. Both the power cycling and thermal cycling tests were carried out to compare the reliability differences. The experimental results showed that the thermal cycling lifetime of automotive IGBTs was obviously better than that of industrial grade products. However, the power cycling lifetime of automotive IGBT was worse than that of the industrial grade product.