Abstract: The third generation of wide bandgap semiconductor as silicon carbide（SiC） breakthroughs the performance caps of silicon（Si） based power semiconductor devices in voltage, temperature, switching loss and switching speed, thus, the weight, size and cost of power electronic converters may be decreased, and the performance of power electronic system may be improved significantly. Power driver of electric vehicles with high power density is always the main development challenge of high power electric vehicles. The usage of wide bandgap semiconductors may has significant impacts on new generation electric vehicles, especially hybrid electric vehicles. In this paper, the development of SiC power devices is introduced first; then, research statues and application prospects of SiC devices in electric vehicle are presented; last, the main problems of EV driving system using SiC power devices are discussed.