Abstract: GaN offers the benefits of high-temperature resistance, high breakdown voltage, and high electron migration rate as a popular wide bandgap semiconductor material. Packaging technology is critical to make use of these benefits fully and for device to be operated reliably. Firstly, the similarities and differences of Si-based, SiC-based, and GaN-based devices/modules are compared and discussed. The difficulties and solutions are then addressed from the perspectives of package stray inductance, heat dissipation design, and interconnection reliability. The possible shortcomings of the current research are discussed. Based on the review and analysis, this paper finally put forward the urgent problems to be solved in the future on GaN power device/module packaging technology and the research prospects.