Abstract: The appearance of the third generation of wide band gap power devices based on SiC promotes the development of power electronic converters towards much higher frequency, higher power density and smaller volume. However, with the increase of switching speed, the parasitic parameters in the circuit have more and more influence, leading to serious crosstalk problems in bridge converter. According to the characteristics of SiC metal-oxide- semiconductor field-effect transistor (MOSFET), the novel crosstalk suppression driving circuit is proposed based on the drive circuit with RCD (resistor–capacitor–diode) level shift, which provides a low impedance branch for the crosstalk current, and the crosstalk problem can be suppressed effectively. Then, the equivalent model of crosstalk suppression driving circuit is established, and the relationship between the capacitance and the peak value of crosstalk voltage can be obtained, which provides design reference for this circuit. The effectiveness of the proposed driving circuit and the corresponding equivalent model is verified by the double-pulse experimental test. The experimental results show that, compared with the traditional driving circuit, the novel crosstalk suppression driving circuit can suppress the spike voltage induced by the crosstalk process under different voltage and current operating conditions on the premise of ensuring the switching speed.