Abstract: SiC metal-oxide-semiconductor field effect transistor (MOSFET) has excellent performance and rapid development in the industrial applications. Its failure is closely related to junction temperature, making junction temperature monitoring technology for SiC MOSFET crucial and a focal point of recent years. This paper divides this technology into three parts: classical junction temperature monitoring, junction temperature monitoring considering the aging effect and junction temperature control. For the classical junction temperature monitoring technology, the principle, model, development, disadvantages and advantages of thermal model methods and thermal sensitive electrical parameter methods are introduced. For the junction temperature monitoring technology considering the aging effect, the effect of aging on junction temperature monitoring is analyzed, the necessity of aging compensation technology is discussed, and the limitations of existing methods are pointed out. As for the junction temperature control technology, the significance is analyzed, the principle of internal control method and external control method is introduced, and the advantages and disadvantages of various methods are compared. Finally, based on the above analysis, this paper points out the key problems and future development directions in the field of SiC MOSFET junction temperature monitoring, aiming to provide reference for relevant researchers.