Abstract: To prevent damage to the IGBT DC capacitance in full-bridge submodules, modular multilevel converters (MMCs) in practical applications typically implement dead-time control using "break-before-make" operation. Simulating this dead-time process is essential as it affects capacitor voltage variations and increases output-side total harmonic distortion (THD). However, due to diode freewheeling during dead time, simulations currently require detailed discrete-component models, as existing accelerated equivalent models cannot incorporate dead-time effects. This paper presents a solution combining discrete diode modeling with MMC Thévenin equivalent circuits, featuring separate "dead-time operation" and "normal operation" submodule designs with state transitions achieved through state variable inheritance. The proposed method has been implemented in PSCAD/EMTDC for both detailed dead-zone modeling and equivalent modeling of full-bridge MMCs. Simulation results demonstrate that the proposed model achieves high acceleration ratios while maintaining accuracy, fully meeting practical engineering simulation requirements for MMC systems with dead-time control.