Abstract:
Silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) generate high d
v/d
t and d
i/d
t during fast switching action, which can cause serious common-mode electromagnetic interference (EMI) to other equipment. In order to improve the electromagnetic compatibility (EMC) of power electronics, this paper presents a novel CM EMI suppression method based on synchronous pulses compensation (SPC), by analyzing the generation mechanism of common-mode (CM) EMI for Buck DC/DC power converter. First, CM EMI model of the synchronous Buck DC/DC converter is established, and the function relationship between the switching waveform of SiC MOSFET and CM EMI noise is obtained. Then the simplified time domain model of the switching waveform is constructed and the spectrum of CM EMI noise is predicted. Simultaneously, a theoretical analysis of the possibility of employing the CM EMI suppression approach for SPC is conducted. Furthermore, an implementation scheme of SPC based on field-programmable gate arrays (FPGA) is built. And also, a prototype is produced and tested through experiments. Then, an experiment explores the impact of non-ideal SPC and the CM inductor. Finally, the experimental results, measured on a standard test board with the synchronous Buck DC/DC converter, show good agreement with theoretical analysis.