Abstract: Wide band gap semiconductor devices have the advantages of high frequency, high efficiency and high power density. However, the characteristics of low parasitic capacitance, low threshold voltage and fast switching also make them more susceptible to switching oscillation. In this paper, the types, mechanism, sensitive parameters and suppression methods of switching oscillation are reviewed. First, the oscillations are divided into damped oscillations and self-sustained oscillations according to the waveform characteristics, Then, the analysis models of switching oscillation including device model and switching circuit model are established. Based on which the mechanism of two types of oscillations, sensitive parameters, and the influence of each sensitive parameter on oscillation characteristics are studied. Next, the difference and correlation between the two kinds of switching oscillations are analyzed. Finally, the main methods of suppressing switching oscillation are summarized, and the advantages and disadvantages of each method are compared and analyzed. The previous research results are summarized and extended in this paper, aiming to assist researchers in effectively applying wide band gap devices to high-frequency and high-power conversion conditions.